VP11A SUTEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
SUPERTEX INC OL De g§s773275 0001731 1 i
8773295 SUPERTEX INC O1E 01731 OD
@ Supertex inc. : T- 37-17 ® P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BV 55 / loon Order Number / Package BV o0s (min) [tos [rosa] to-220 [pice | Features Advanced DMOS Technology Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- ize a vertical DMOS structure and Supertex's well-proven silicon- Low power drive requirement gate manufacturing process. This combination produces devices
1 Ease of paralleling with the power handling capabilities of bipolar transistors and with
. the high input impedance and negative temperature coefficient 0 Low C,., and fast switching speeds inherent In MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- O Excellent thermal stability induced secondary breakdown. © Integra Gouroe-Drain dlode Suportex Vertical DMOS Power FETs are ideally suited to a wide
1 High input impedance and high gain range of switching and amplifying applications where high break-
down voltage, high input Impedance, low input capacitance, and © Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notas 1 and 2) © Motor contro! © Convertors O Amplifiers O Switches Power supply circuits O Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) O88 r oR i mi i <> i Absolute Maximum Ratings Ss i roe Drain-to-Source Voltage BV oss Toa | Drain-to-Gate Voltage BVoas, i Gate-to-Source Voltage £20V ; Operating and Storage Temperature 55°C to +150°C Note 1: See Package Outine section for discrete pinouts. ‘Soldering Temperature* 300°C Note 2: See Array section for quad pinouts. i Data of 18 mm tom cas or TO eee : H i en an
Thermal Characteristics 1239-19 (continuous)* Power Dissipation i} [es % Ge lon ona . @T, = 26°C cw ecw [Toa = | oats] ow Tce fea | tc | [rose | 5A Ta Tow tes |e | sa [7A | [wo2eo [son ea sw 0 are an | -t2n | * tp (continuous) is limites by max rated T,. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [_svmbor [Parameter [min [typ [max [ unit [Conditions | : BY, Drain-to-Source Lvpiti0 | -100 | : a | Mesum | Gate Threshold vonage | || 85 [OV | Vog=Voulp= mA | : [Vasu | Change in Vag with Temperature [| 40 | [mvPC Tipe SMAVog =Vog | | less | Gate Body Leakage || t00 [nA | Vag =220V, Vig | toss Zoro Gate Voltage Drain Current [80 [WA [Vos = 9, Vog= Max Rating | mA Vog = 0; Vpg = 0.8 Max Rating Ty= 125°C . ‘ON-State Drain Current [4.0 | ! | 50 | , Reson | Stalle Drain-to-Source a ON-State Resistance [is [2] | ARosiom | Change in Rogan with Temperature [| 07 [4.0 | PC | Ipe4.0A,Vage OV | | G., | Forward Transconductanco | 09 | 9 | [| Vc -28Vb= 208 | | Cs | Input Capacitance || 00 | 880 | Ve. #0,V,. =-20V | Coss [Common Source Ouiput Capacitance || 100 | 150 | pF | yun ® ‘ | Css | Reverse Transfer Capacitance || 20 | 8 | | ‘yom | Tumn-ON Delay Time 85 | a0 | . [4 | Risotime Te 80 | tony : | twor | TurvOFF DelayTime || 40 | 0 | R= 500 | [4 | Faltime Tt 20 | : i | Veo | Diode Forward Votage Drop || ta | 25 | OV | iip= TOA Vag=0 | : [i [Reverse Recovery Time [400 [ns | ape fOAVgg=0 | j Note 1; ANID.G. paramotere 100% tosted at 25° unless otherwise stated. (Pulse tos: 300qs pulee, 2% duly la) i : Note2: AVA. parameters sample tote. Switching Waveforms and Test Circuit Yoo oon me input 19% oo ple 77 \\OFF) + | GENERATOR | ‘SCOPE I t DUT. output ! | son 10% 10% I \\ ° 9-50
SUPERTEX INC ———————S DE J az7ae9s oooizaa s Typical Performance Curves venta 7-39-79 Output Characteristics Saturation Characteristics 1 “10 o “TTT TTT TT ° een a CECA 4 ECE J eee Pt Ae a (1 Dae @ o.[ Tt Yyzeer s tt ert ‘d HA 2 | pet. e Ae Ee 7 2 Terr | 7H ee _ Zoe eo Ae [ATT Tt VET TTT Tt tt ARS e %o —10 20 30 40-60 ° o 2 4 6 8 =10 Vos (VOLTS) Vos (VOLTS) Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature 20 100 [TT TTT Ty TT j | f ft fy ff ve EET Teeee TT 0 fog pf (yi tit ttt yy os 3 [ft fare = of -N | TT a ee 60
2 Vit yy yy E hoxge—] {| |
g Urry TT &. Tt} NIN ow ATT TT »i | | KAP A Ne o>ELT TTT Tt tr) Py SS ot 025076 00128180 1p (AMPERES) Te fc) Maximum Rated Safe Operating Area Thermal Response Characteristics OO a a oe es 1 — Sl 5 A Fe rs ee per ry TINA 3 | {| | YZ Pa TIL NNI Fi [| tom A 7 | ee N I NNT i emt. AL a os 5 SS 2 [| ro-tm7 | 4 a w ee PEN eeee eal | ee i 77ers a sD eS & WA V [| eo Fy [7 x Li Ti é [AY]; TT ; oo LLU TTT a a 04 1 10 100 0,001 0.01 at 1 10 Vos (VOLTS) tp (SECONDS)
SUPERTEX INC OL ve arzaeas 0001734 ? T VPIIA 7-39-09 | BVDSS Variation with Temperature ON-Resistance Vs. Drain Source Current “CTTTT TTT * COT TTT e EEE EE “He eH g | oe ee 2 Cour “CCC Te 8 Coes § pec crre @ COC anne Bo? CCE EET ee A 22 a LOTT a LLL » CCE Ty Cc) 1p (AMPERES) ‘Transfer Characteristics . ‘Vith) and RDS Variation with Temperature va [Voctay | ef LT] [TTT TT
4 ELE] a CL fe]
Poe) SSE
8 A 2 4 || Nea 1
. ° POP e ‘Cpe Ne TT » EEA 4 BE 2 & ‘. COZ] 8 CEC erecee. 4 os CECA TTT COC (OO OA TT » CLEFT, VGs (VOLTS) Tec) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics . . aa “CTT TTT HH “N 7 TT eel | MAG , | » Coord Ew Nal css ee é N s «COO 8 neces LF ww / Oe L | | | ee CCE ECE ° rss VLEET TTT 9-52 i ne a