VP0808 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices TO-92 S G D
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP0808 Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja °C/W °C/W TO-92 -0.28A -3A 1W 125 170 * ID (continuous) is limited by max rated T j. Thermal Characteristics Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -80 V V GS= 0V, ID =-10µA VGS(th) Gate Threshold Voltage -1.0 -4.5 V V GS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating -500 µAV GS = 0V, VDS = Max Rating TA = 125°C ID(ON) ON-State Drain Current -1.1 A V GS = -10V, VDS = -15V RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 Ω VGS = -10V, ID = -1A GFS Forward Transconductance 200 m V DS = -10V, ID = -0.5A CISS Input Capacitance 150 COSS Common Source Output Capacitance 60 pF CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 15 tr Rise Time 40 td(OFF) Turn-OFF Time 30 tf Fall Time 30 VSD Diode Forward Voltage Drop -1.2 V V GS = 0V, ISD = -0.9A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) ns VDD = -25V, ID = -0.5A RGEN = 25Ω VGS = 0V, VDS = -25V f = 1MHz Ω