VP0550 SUTEX | Alldatasheet

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices BVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 -500V 125 Ω -100mA VP0550N3 Order Number / Package

Ordering Information

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP0550 Switching Waveforms and Test Circuit Electrical Characteristics (@ 25°C unless otherwise specified) Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 -54mA -0.25A 1W 125 170 -54mA -0.25A * ID (continuous) is limited by max rated Tj. Symbol Parameter Min Typ Max Unit Conditions BVDSS -500 VGS(th) Gate Threshold Voltage -2.0 -4.5 V V GS = VDS, ID = -1mA ∆VGS(th) Change in VGS(th) with Temperature 3.5 6 mV/ °CV GS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -90 V GS = -5V, VDS = -25V -100 -240 V GS = -10V, VDS = -25V RDS(ON) 85 V GS = -5V, ID = -5mA 80 125 V GS = -10V, ID = -10mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.85 %/ °CV GS = -10V, ID = -10mA GFS Forward Transconductance 25 40 m V DS = -25V, ID = -10mA CISS Input Capacitance 40 70 COSS Common Source Output Capacitance 10 20 pF CRSS Reverse Transfer Capacitance 3 10 td(ON) Turn-ON Delay Time 5 10 tr Rise Time 8 10 td(OFF) Turn-OFF Delay Time 8 15 tf Fall Time 5 16 VSD Diode Forward Voltage Drop -0.8 -1.5 V V GS = 0V, ISD = -0.1A trr Reverse Recovery Time 200 ns V GS = 0V, ISD = -0.1A Notes: 2. All A.C. parameters sample tested. mA VV GS = 0V, ID = -1mADrain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance -1000 VDD = -25V ns I D = -100mA RGEN = 25Ω VGS = 0V, VDS = -25V f = 1 MHz Ω Ω

Typical Performance Curves VP0550 Output Characteristics 0 -10 -20 -30 -50 -40 Saturation Characteristics 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -1 -1000 -100-10 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 Transconductance vs. Drain Current 100 GFS (millisiemens) Power Dissipation vs. Case Temperature 0 15010050 125 7525 -100 -80 -60 -40 -20 TO-92 100.001 0.01 0.1 1.0 TA= -55°C VDS TA = 25°C TA = 150°C VGS = -10V VGS = -10V -5V -8V -1.0 -0.1 -0.01 -0.001 2.0 -0.3 -0.5 -0.4 -0.1 -0.2 -7V -6V -5V -4V -8V -6V TO-92(DC) TO-92 PD = 1W TC = 25 °CTC = 25 °C VDS (volts) ID (amperes) ID (milliamps) VDS (volts) GFS (millisiemens) ID (amperes) T C (°C) PD (watts) VDS = -25V VDS (volts) ID (amperes) tp (seconds) 1.0

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VP0550 Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage C (picofarads) 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 -0.4 -0.2 A f = 1MHz -10 83pF 30pF 200 160 120 V(th) @ -1mA RDS(ON) @ -10V, -10mA 1.10 1.05 1.00 0.95 0.90 0.85 2.0 1.6 1.2 0.8 0.4 RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V VGS = -10V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) VDS = -25V TA = -55°C TA = 25°C TA = 150°C CISS COSS CRSS QG (nanocoulombs) VGS (volts) VDS (volts) VDS = -40V VDS = -10V