VP0535 SUTEX | Alldatasheet
Document overview
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Technical content
Features
■■ Free from secondary breakdown ■■ Low power drive requirement ■■ Ease of paralleling ■■ Low CISS and fast switching speeds ■■ Excellent thermal stability ■■ Integral Source-Drain diode ■■ High input impedance and high gain ■■ Complementary N- and P-channel devices Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-39 TO-92 Die † -350V 75 Ω -200mA VP0535N2 VP0535N3 VP0535ND -400V 75 Ω -200mA — VP0540N3 VP0540ND † MIL visual screening available TO-39 TO-92
Ordering Information
Case: DRAIN – OBSOLETE –
90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP0535/VP0540 Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W ID (continuous) is limited by max rated T j. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS VP0540 -400 VP0535 -350 VGS(th) Gate Threshold Voltage -2.5 -4.5 V V GS = VDS, ID = -1mA ∆VGS(th) Change in VGS(th) with Temperature 3.5 6.0 mV/ °CV GS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating -500 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -80 V GS = -5V, VDS = -25V -200 -350 V GS = -10V, VDS = -25V RDS(ON) 60 V GS = -5V, ID = -10mA 45 75 V GS = -10V, ID = -50mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.8 1.5 %/ °CV GS = -10V, ID = -50mA GFS Forward Transconductance 50 70 m V DS = -25V, ID = -50mA CISS Input Capacitance 40 60 COSS Common Source Output Capacitance 11 20 pF CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 15 VSD Diode Forward Voltage Drop -0.8 -1.5 V V GS = 0V, ISD = -0.1A trr Reverse Recovery Time 200 ns V GS = 0V, ISD = -0.1A Notes: 2. All A.C. parameters sample tested. mA Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VV GS= 0V, ID =-1mA VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns I D = -200mA RGEN = 25Ω
Electrical Characteristics
Ω Ω – OBSOLETE –
Typical Performance Curves VP0535/VP0540 Output Characteristics 0 -10 -20 -30 -50 -40 Saturation Characteristics 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -1 -1000 -100-10 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 Transconductance vs. Drain Current 100 Power Dissipation vs. Case Temperature 0 15010050 125 7525 -0.2 TO-39 TO-92 TO-39 PD = 3.5W TC = 25 °C 100.001 0.01 0.1 1.0 TO-92(DC) TO-39 (pulsed) TO-39(DC) TA = -55°C VDS = -25V TA = 25°C TA = 150°C 0 -0.3-0.15 VGS = -10V -8V VGS = -10V -4V -8V -6V -1.0 -0.1 -0.01 -0.001 -6V -0.1 -0.3 -0.5 -0.4 -0.1 -0.2 -4V TC = 25 °C VDS (volts) ID (amperes) ID (amperes) VDS (volts) GFS (millisiemens) ID (amperes) T C (°C) PD (watts) VDS (volts) ID (amperes) tp (seconds) TO-92 PD = 1W TC = 25 °C – OBSOLETE –
Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage C (picofarads) 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 -4.0 -2.0 VDS = -25V TA = 25°C TA = 125°C f = 1MHz -10 150 pF VDS = -40V VDS = -10V 32pF 120 100 V(th) @ -1mA RDS(ON) @ -10V, -50mA 1.1 1.0 0.9 2.0 1.0 RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V VGS = -10V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) TA = -55°C QG (nanocoulombs) VGS (volts) VDS (volts) RDS(ON) (normalized) CISS COSS CRSS – OBSOLETE –