VP0350 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices BV DSS /R DS(ON) ID(ON) BV DGS (max) (min) TO-3 TO-220 Die † -500V 7.5 Ω -1A VP0350N1 VP0350N5 VP0350ND † MIL visual screening available Order Number / Package
Ordering Information
Case: DRAIN TO-220 TAB: DRAIN G D S – OBSOLETE –
90% 10% 90%90% 10% 10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD R gen -10V Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage -500 V V GS = 0V, ID =-10mA VGS(th) Gate Threshold Voltage -2.5 -4.5 V V GS = VDS , ID = -10mA ∆V GS(th) Change in VGS(th) with Temperature 4.8 6.0 mV/ °CV GS = VDS , ID = -10mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -200 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -1.5 V GS = -5V, VDS = -25V R DS(ON) 6.0 V GS = -5V, ID = -0.25A 5.5 7.5 V GS = -10V, ID = -0.25A ∆R DS(ON) Change in RDS(ON) with Temperature 0.7 1.2 %/ °CV GS = -10V, ID = -0.25A G FS Forward Transconductance 0.25 0.45 V DS = -25V, ID = -0.5A C ISS Input Capacitance 720 800 C OSS Common Source Output Capacitance 110 130 pF C RSS Reverse Transfer Capacitance 20 50 td(ON) Turn-ON Delay Time 11 30 tr Rise Time 11 30 td(OFF) Turn-OFF Delay Time 70 100 tf Fall Time 22 30 VSD Diode Forward Voltage Drop -1.0 -1.3 V V GS = 0V, ISD = -0.25A trr Reverse Recovery Time 550 ns V GS = 0V, ISD = -0.25A Notes: 2. All A.C. parameters sample tested. VP0350 Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θθθθθjc θθθθθja IDR *I DRM @ T C = 25°C °C/W °C/W ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Thermal Characteristics A -2 mA VGS = 0V, VDS = -25V f = 1 MHz Static Drain-to-Source ON-State Resistance VDD = -25V ns I D = -1A R GEN = 10Ω Ω Ω – OBSOLETE –
Typical Performance Curves VP0350 Output Characteristics 0 -10 -20 -30 -50 -40 Saturation Characteristics 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -1 -1000 -100-10 -0.1 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 Power Dissipation vs. Case Temperature 0 15010050 100 1257525 -2.0 -1.6 -1.2 -0.8 -0.4 TO-220 TO-3 TO-220 P D = 50W TC = 25°C 100.001 0.01 0.1 1 TO-220 (DC) TO-3 (DC) TO-220 (pulsed) TA = -55°CA VDS = -25V TA = 25°C TA = 150°C VGS = -10V -6V -4V VGS = -10V -8V -5V -4V -5V -8V -6V -7V TC = 25°C VDS (volts) ID (amperes) ID (amperes) VDS (volts) G FS (siemens) ID (amperes) T C (°C) PD (watts) VDS (volts) ID (amperes) tp (seconds) TO-3 PD = 100W TC = 25°C – OBSOLETE –
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 222-8888 • FAX: (408) 222-4895 www.supertex.com 05/19/03 ©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VP0350 Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage C (picofarads) 0- 1 0 - 2 0 - 30 -40 800 600 400 200 -50 0 50 100 150 1.2 1.1 1.0 0.9 0.8 2.0 1.0 -50 0 50 100 150 -10 VGS = -10V 01 0 2468 VDS = -40V VDS = -10V 800 pF 500 pF f = 1MHz TA = -55 TA = 150 °CTA = 25 VDS = -25V 0- 1 0 -2 -4 -6 -8 -5.0 -4.0 -3.0 -2.0 1.15 1.1 1.05 1.0 0.95 0.9 0 0 V(th) @ -10mA R DS(ON) @ -10V, -0.25A -1.0 R DS(ON) (ohms) BV DSS (normalized) Tj (°C) ID (amperes) BV DSS Variation with Temperature VGS = -5V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) R DS(ON) (normalized) Q G (nanocoulombs) VGS (volts) VDS (volts) C ISS C OSS C RSS – OBSOLETE –