VP0300 SUTEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
■■ Free from secondary breakdown ■■ Low power drive requirement ■■ Ease of paralleling ■■ Low CISS and fast switching speeds ■■ Excellent thermal stability ■■ Integral Source-Drain diode ■■ High input impedance and high gain ■■ Complementary N- and P-channel devices BVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 -30V 2.5 Ω -1.5A VP0300L Order Number / Package
Ordering Information
– OBSOLETE –
90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP0300 Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θja θjc TC = 25°C °C/W °C/W TO-92 -0.32A -0.87A 1.0W 170 125 * ID (continuous) is limited by max rated T j. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -30 V V GS= 0V, ID =-10µA VGS(th) Gate Threshold Voltage -1.0 -1.8 -4.5 V V GS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±30V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = -25V -500 µAV GS = 0V, VDS = -25V TA = 125°C ID(ON) ON-State Drain Current -1.5 -1.7 A V GS = -12V, VDS = -10V RDS(ON) Static Drain-to-SourceON-State Resistance 2.5 Ω VGS = -12V, ID = -1A GFS Forward Transconductance 200 m V DS = -10V, ID = -0.5A CISS Input Capacitance 150 COSS Common Source Output Capacitance 120 pF CRSS Reverse Transfer Capacitance 60 t(ON) Turn-ON Time 30 ns t(OFF) Turn-OFF Time 30 VSD Diode Forward Voltage Drop -1.2 V V GS = 0V, ISD = -1.5A Notes 2. All A.C. parameters sample tested. VGS = 0V, VDS = -15V f = 1MHz VDD = -25V, ID = -1A RGEN = 25Ω Switching Waveforms and Test Circuit Ω – OBSOLETE –