VP02A SUTEX | Alldatasheet
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SUPERTEX INC a1 pefserzaess ooowss 1 @ Supertex inc. T- 34-/97 ® P-Channel Enhancement-Mode Vertical DMOS Power FETs :
Ordering Information
BV gs / Rosion) toon Order Number / Package BVoos (max) (min) toxe | To#2 [70-220 [ Quad p-pip | Quad c-DiP Low [so [ssa | veozrone [ veoarons | vroaions | — | — _| Features Advanced DMOS Technology Freedom from secondary breakdown: These enhancement-mode (normally-off) power transistors util- a ize a vertical DMOS structure and Supertex's well-proven silicon- © Low power drive requirement gate manufacturing process. This combination produces devices Ease of paralleling with the power handling capabilities of bipolar transistors and with . the high input impedance and negative temperature coetticient © Low C,,. and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, a" these devices are free from thermal runaway and thermally- O Excellent thermal stability induced secondary breakdown. © Integral Source-Drain diode Supertex Vertical DMOS Power FETs are ideally suitedtoawide © High input impedance and high gain range of switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and © Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notes 1 and 2) © Motor contro! O Convertors © Amplifiers O Switches © Power supply circuits ky: Driver (Relays, Hammers, Solenoids, Lamps, Tow — I Memories, Displays, Bipolar Transistors, etc.) 7 : ro fi To20 Absolute Maximum Ratings Drain-to-Source Voltage BVoss Drain-to-Gate Voltage BV pos tutesape Gate-to-Source Voltage +20V Operating and Storage Temperature 55°C to +150°C Note 1: Seo Package Outine section for ésrete pinouts. Soldering Temperature* 300°C Note 2: See Array section for quad pinouts. “Distance of 1.6 mm from case for 10 seconds. 913 |
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soas . VPO2A Thermal Characteristics 7-39-19 ; |, (continuous)* Power Dissipation i .@T, = 25°C } 70-39 [owas] won| ew Tt | 20 -oea [40a | ! [toe | oan | SA wT to | a5 | oan | 5a | i Refer to Arrays & Special Functions Section. j 7p (continuous) is limited by max rated T,. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 4 and 2) [“symbor [Parameter | Min [Typ | Max [ unit [Conditions 1 [pecei0 | 00 | BY, Drain-to-Source [vpoz0s | ss Breakdown Voltage vpoz0s | -60_| v [p= -2.5MA, Vgg = 0 [vpozos | 40 | Gate Threshold Voltage [to 8S TV | Vos Vos o=-25mA Ghange in Vga with Temperature [30] 88 [mre | 1p=25mA, Ves Vos | | toss Gate Body Leakage [| 0 [00 [8A | Vos = #20V. Vos = 0 Zero Gate Voltage Drain Current [28 TWA] Vos = 0, Vag = Max Rating | Veg = 0; Vpg = 0.8 Max Rating T, = 125°C ‘ON-Siate Drain Current ee Vos = “BV; Vg = -25V [as [25] | Static Draln-to-Source | 8.0 | Vos = “5V. Ip = “0.250 ‘ON-State Resistance [40 | Vag = “10V, I, = 500mA Change in Rysioxy With Temperature [ [075 | 12 | wre | 1p=-1.0A, Vag= 10V [Ge | Forward Transconductance | 03 | 05 | | 8 | Vyge 26Vi--10A Input Capacitance [| 90 | 160 | Vi. #0, V,¢=-25V Gommon Source Output Capacitance || 68 | 85 | tStMHe Reverse Transfer Capacitance | i 20] Turn-ON Delay Time a [| Risetime | V0 “ Turn-OFF Delay Time [fo Ts | f= 500 Fall Time [|e | 0 | : Diode Forward Voltage Drop [ft [2.0 [VT too “1A, Vos = 0 [4 [Reverse Recovery time TT 490 ns tgp tAVege0 Noe 1) ATO. paramere 100% lostod at 25°C uiless otro slated (Puce tot 200, puso, 2% Guy eyo) Note: AIAG. parameters sample tested. Switching Waveforms and Test Circuit Yoo 0% AL 10%, ro puss on NOFA | aeneharon | SCORE | 1 our. [om ouput ! I soa ro Te i i i ¥ sont hore | ee is ¥ O14
SUPERTEX INC OL de BJa77ae%s gO01b97 S i ‘POZA Typical Performance Curves T-39-/> Output Characteristics Saturation Characteristics , [TTT TTT yt Ty [TTT yyy yt ty JEEP uLLEP TT TT [TT Pry yt ety LPT TT yy g sttttty tT — s-LEEET TTT i CI ov PP & (eer av aL er 2 gee oe Cee es | A ce A rn rT a a a) . 2 «6 8 4 Vps (volts) Vos (volts) ‘Transconductance vs. Drain Current Power Dissipation vs. Case Temperature ee eed a os Jt a LTyi yt tt ty a oe eee jy ee i a) See g zee { “@ oa iS) Se a Sn a & PATTI TT | | [NT | ' my ARBRE ot tT TF IN i We Lt IN AGERE Lrosg ‘ oO 08 16 24 32 40 ° Ey 50 6 100, 125 150, . Ip (amperes) To (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 sa — a 4 10 [ree peo ttt ti 7 (+ J cisipes CoS Cl 4 os | —r0220 [ Af Pewee || TINS i a om Me eo SS a Ton 26 A |7 _| FEES EHH os | § Eo ree ty z2°[ [7 | 7 | & | 5 Ff TFL _i| Fis CCC 2° 7 7 Fee a rose Ee eon co gi ALA Cae ot 6 |Z | oo LLLU TT} e ETT Ty Vps (volts) tp(milliseconds) | 915,
SUPERTEX INC - ol DE Pp srzaeqs oo01b48 7 rT ‘ VPO2A T-39-19 BVpss Variation with Temperature On-Resistance vs. Drain Current rTTTTLoLo Hs Peer rr wl CCA a a ee ee se ? OCC F Lee a e* 7 Li g ALCOA A LL el A eae é ‘Ee pert Ceres JEL ee LeeLee wLLLE LEE COPE CC EA “ 0 A 2 3 4 5 ” ° ee) “ = Ip (amperes) Transfer Characteristics Vin) and Rog Variation with Temperature [TT LCE JOLL LL] CEE Eee is ‘ Og COC EEC gull two"; ¢ w=LOLLCE ee i fi A vt oe . g 7 iA i” E a LETT yt ee) 5 ol le H § CLO 8° A... & 52 re - be 8g ed 5A LTT" 3 EEE AAS Cerri. ae wl EC COCA CCE, ° ; Vas (volts) . ° TieC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics nae Teh wLLLL LIL i CLEEAT oN ee ee eo 8 COO H ~~ e 8 LA for
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| « = WAAL EL NI aT Tt Vps (volts) Qg (nanocoulombs) | 9-16