VP0120 SUTEX | Alldatasheet
Document overview
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Technical content
Features
■■ Free from secondary breakdown ■■ Low power drive requirement ■■ Ease of paralleling ■■ Low CISS and fast switching speeds ■■ Excellent thermal stability ■■ Integral Source-Drain diode ■■ High input impedance and high gain ■■ Complementary N- and P-channel devices Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 Die † -200V 25 Ω -100mA VP0120N3 VP0120ND †MIL visual screening available
Ordering Information
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90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Symbol Parameter Min Typ Max Unit Conditions BVDSS -200 VGS(th) Gate Threshold Voltage -1.5 -3.5 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 6.0 mV/ °CI D = -1.0mA, VGS = VDS IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -100 -400 V GS = -5V, VDS = -25V -350 -750 V GS = -10V, VDS = -25V RDS(ON) 25 40 V GS = -5V, ID = -50mA 15 25 V GS = -10V, ID = -100mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.6 %/ °CV GS = -10V, ID = -100mA GFS Forward Transconductance 50 70 m V DS = -25V, ID = -100mA CISS Input Capacitance 50 60 COSS Common Source Output Capacitance 10 30 pF CRSS Reverse Transfer Capacitance 5 10 td(ON) Turn-ON Delay Time 4 10 tr Rise Time 4 10 td(OFF) Turn-OFF Delay Time 4 10 tf Fall Time 4 11 VSD Diode Forward Voltage Drop -1.0 V I SD = -0.5A, VGS = 0V trr Reverse Recovery Time 500 ns I SD = -0.5A, VGS = 0V Notes: 2. All A.C. parameters sample tested. VP0120 Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. Thermal Characteristics mA VGS = 0V, VDS = -25V f = 1 MHz Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance -1 mA VI D = -1.0mA, VGS = 0V Electrical Characteristics (@ 25°C unless otherwise specified) VDD = -25V ns I D = -350mA RGEN = 25Ω Ω Ω – OBSOLETE –
Typical Performance Curves VP0120 Output Characteristics 0 -10 -20 -30 -50 -40 VDS (volts) ID (amperes) VDS (volts) ID (amperes) Saturation Characteristics -0.5 -0.4 -0.3 -0.2 -0.1 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -0.1 -1.0 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 Transconductance vs. Drain Current 140 120 100 Power Dissipation vs. Case Temperature 0 15010050 1257525 DP (watts) TO-92 PD = 1W TC = 25 °C TC = 25 °C 0 -1000-100-10 TA = -55°C TA = 25°C TA = 125°C VDS = -25V VGS = -10V -1.0 -0.8 -0.6 -0.4 -0.2 VGS = -10V -6V -8V TO-92 -8V -4V -6V -4V TO-92 (DC) GFS (millisiemens) ID (amperes) T C (°C) VDS (volts) ID (amperes) tp (seconds) – OBSOLETE –
Typical Performance Curves Gate Drive Dynamic Characteristics V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage C (picofarads) BVDSS Variation with Temperature 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.10 1.06 1.02 0.98 0.94 0.90 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 150 -1.0 -0.8 -0.6 -0.4 -0.2 VDS = -25V TA = -55°C TA = 25°C TA = 125°C f = 1MHz -10 100 pF VDS = -40V VDS = -10V 50pF 100 VGS = -5V VGS = -10V V(th) @ -1.0mA RDS(ON) @ -10V, -100mA RDS(ON) @ -5V, -50mA 1.25 1.0 0.75 100 pF RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) Tj (°C) VGS(th) (normalized) VGS (volts) ID (amperes) RDS(ON) (normalized) QG (nanocoulombs) VGS (volts) VDS (volts) 0.4 CISS COSS CRSS – OBSOLETE –