VP0104 SUTEX | Alldatasheet

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Order Number / PackageBV DSS /R DS(ON) ID(ON) BV DGS (max) (min) TO-92 Die † -40V 8.0 Ω -0.5A VP0104N3 — -60V 8.0 Ω -0.5A VP0106N3 — -90V 8.0 Ω -0.5A VP0109N3 VP0109ND TO-92

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD R gen -10V Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T C = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. Thermal Characteristics VP0104/VP0106/VP0109 Symbol Parameter Min Typ Max Unit Conditions VP0109 -90 VP0106 -60 VP0104 -40 V GS(th) Gate Threshold Voltage -1.5 -3.5 V V GS = VDS , ID = -1.0mA ∆V GS(th) Change in VGS(th) with Temperature 5.8 6.5 mV/ °CI D = -1.0mA, VGS = VDS IGSS Gate Body Leakage -1.0 -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.15 -0.25 V GS = -5V, VDS = -25V R DS(ON) 11 15 V GS = -5V, ID = -0.1A ∆R DS(ON) Change in RDS(ON) with Temperature 0.55 1.0 %/ °CV GS = -10V, ID = -0.5A G FS Forward Transconductance 150 190 m V DS = -25V, ID = -0.5A C ISS Input Capacitance 45 60 C OSS Common Source Output Capacitance 22 30 pF C RSS Reverse Transfer Capacitance 3 8 td(ON) Turn-ON Delay Time 4 6 tr Rise Time 3 10 td(OFF) Turn-OFF Delay Time 8 12 tf Fall Time 4 10 VSD Diode Forward Voltage Drop -1.2 -2.0 V I SD = -1.0A, VGS = 0V trr Reverse Recovery Time 400 ns I SD = -1.0A, VGS = 0V Notes: 2. All A.C. parameters sample tested. VI D = -1.0mA, VGS = 0V -1 mA A VGS = 0V, VDS = -25V f = 1 MHz Static Drain-to-Source ON-State Resistance BV DSS Drain-to-Source Breakdown Voltage VDD = -25V ns I D = -0.5A R GEN = 25Ω Electrical Characteristics (@ 25°C unless otherwise specified) Ω Ω

Typical Performance Curves VP0104/VP0106/VP0109 Output Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 VDS (volts) ID (amperes) ID (amperes) D Saturation Characteristics 0- 2- 4 - 6 -10-8 VDS (volts) Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -0.1 -1.0 -10 -0.01 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 250 200 150 100 G FS (millisiemens) ID (amperes) Power Dissipation vs. Case Temperature 0 15010050 2.0 1257525 TC (°C) PD (watts) TA = 125°C TA = 25°C TA= -55°CVDS = -25V TO-92 0 -10 -20 -30 -50 -40 VGS = -10V -6V -8V -4V TO-92(DC) TC = 25°C -1.0 -0.8 -0.6 -0.4 -0.2 VGS = -10V -6V -4V -8V TO-92 P D = 1W TC = 25°C 1.0

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 07/08 /02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VP0104/VP0106/VP0109 Typical Performance Curves Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) DSS BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.10 1.06 1.02 0.98 0.94 0.90 1.6 1.4 1.2 1.0 0.8 -50 0 50 100 150 -1.0 -0.8 -0.6 -0.4 -0.2 VDS = -25V TA = -55°C TA = 25°C TA = 125°C f = 1MHz C ISS C OSS C RSS -10 70 pF VDS = -40V VDS = -10V 45pF VGS = -5V VGS = -10V V(th) @ -1.0mA R DS(ON) @ -10V, -0.5A R DS(ON) @ -5V, 0.1A 1.6 1.4 1.2 1.0 0.8 0.6 70 pF R DS(ON) (normalized)