VP0106_13 SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain

Applications

► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 Product Marking Package may or may not include the following marks: Si or Pin Configuration TO-92 GATE SOURCE DRAIN Product Summary BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) -60V 8.0Ω -500mA Typical Thermal Resistance Package θja TO-92 132OC/W

Ordering Information

Part Number Package Option Packing VP0106N3-G TO-92 1000/Bag VP0106N3-G P002 TO-92 2000/Reel VP0106N3-G P003 VP0106N3-G P005 VP0106N3-G P013 VP0106N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Supertex inc. www.supertex.com Doc.# DSFP-VP0106 C082313 VP0106 Electrical Characteristics (TA = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID = -1.0mA ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID = -1.0mA IGSS Gate body leakage current - -1.0 -100 nA VGS = ±20V, VDS = 0V IDSS Zero gate voltage drain current - - -10 µA VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current -0.15 -0.25 - A VGS = -5.0V, VDS = -25V RDS(ON) Static drain-to-source on-state resistance - 11 15 Ω V GS = -5.0V, ID = -100mA - 6.0 8.0 VGS = -10V, ID = -500mA ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA GFS Forward transconductance 150 190 - mmho VDS = -25V, ID = -500mA CISS Input capacitance - 45 60 pF VGS = 0V, VDS = -25V, f = 1.0MHz COSS Common source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 6.0 ns VDD = -25V, ID = -500mA, RGEN = 25Ω tr Rise time - 3.0 10 td(OFF) Turn-off delay time - 8.0 12 tf Fall time - 4.0 10 VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -1.0A trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -1.0A Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% Pulse Generator VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tftr INPUT RGEN INPUT OUTPUT VDD -10V Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† ID (pulsed) Power Dissipation @TC = 25OC IDR † IDRM TO-92 -250mA -800mA 1.0W -250mA -800A

Supertex inc. www.supertex.com Doc.# DSFP-VP0106 C082313 VP0106 Typical Performance Curves BVDSS Variation with Temperature BVDSS (normalized) 1.10 1.06 1.02 0.98 0.94 0.90 -50 0 50 100 150 Tj (OC) Transfer Characteristics On-Resistance vs. Drain Current RDS(ON) (ohms) ID (amperes) VGS = -5.0V VGS = -10V -1.0 -0.8 -0.6 -0.4 -0.2 0 -2 -4 -6 -8 -10 VGS (volts) VDS = -25V TA = -55OC TA = 25OC TA = 125OC VDS = -10V VDS = -40V 70pf 70pf -50 0 50 100 150 -1.6 -1.4 -1.2 -1.0 -0.8 0.6 V(th) and RDS Variation with Temperature Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics VDS (volts) 0 -10 -20 -30 -40 -10 VGS(th) (normalized)VGS (volts) C (picofarads) 100 f = 1MHz CISS COSS CRSS -1.6 -1.4 -1.2 -1.0 -0.8 RDS(ON) (normalized) RDS(ON) @ 10V, -0.5A RDS(ON) @ -5V, -0.1A V(th) @ -1.0mA QG (nanocoulombs) 45pf Tj (OC) ID (amperes)

Supertex inc. www.supertex.com Doc.# DSFP-VP0106 C082313 VP0106 Typical Performance Curves (cont.) Transconductance vs. Drain Current ID (amperes) GFS (millisiemens) 250 200 150 100 TA = 125OC TA = 25OC TA = -55OC VDS = -25V Maximum Rated Safe Operating Area ID (amperes) -0.1 -1.0 -10 -100 VDS (volts) -10 -1.0 -0.1 -0.01 TO-92 (DC) TC = 25OC Output Characteristics ID (amperes) 0 -10 -20 -30 -40 -2.0 -1.6 -1.2 -0.8 -0.4 VDS (volts) VGS = -10V -8V -4V -6V Saturation Characteristics ID (amperes) -1.0 -0.8 -0.6 -0.4 -0.2 VDS (volts) 0 25 50 75 100 125 150 Power Dissipation vs. Case Temperature 2.0 1.0 TO-92 PD (watts) TC (OC) Thermal Response Characteristics 0.001 0.01 0.1 1.0 10 1.0 0.8 0.6 0.4 0.2 TO-92 PD = 1W TC = 25OC tP (seconds) Thermal Resistance (normalized) -5V -7V -9V VGS = -10V -8V -4V -6V -5V -7V -9V 0 -2 -4 -6 -8 -10

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VP0106 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP0106 C082313 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A