VN6035L SUTEX | Alldatasheet
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SUPERTEX INC OL DEG 4773295 0001680 0 I i * | . VN6035L | on | @ Supertex inc. 735-25 Objective ® N-Channel Enhancement-Mode Vertical DMOS Power FETs j Ordering Information | i BV oss / Rosion) Vasin Order Number / Package A BVb08 (mex) (max) [0 | ee tures Feature Advanced DMOS Technology Freedom trom secondary breakdown “These enhancement-mode (normally-off) power transistors util © Low power drive requirement ize a vertical DMOS structure and Supertex's well-proven silicon- Ease of paralleling gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with O Low Cigq and fast switching speeds the high input impedance and negative temperature coefficient © Excellent thermal stability inherent in MOS devices, Characteristic of all MOS structures, \\ 2 . . these devices are free from thermal runaway and thermally- rf} Integral Source-Drain diode induced secondary breakdown. (© High input impedance and high gain ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide 2 Complementary N- and P-Channel devices range of switching and amplitying applications where high break- down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (ote 1) © Motor control © Converters ry © Amplifiers © Telecom Switching (Power supply circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) rose i Absolute Maximum Ratings Drain-to-Source Voltage BV oss. . : Drain-to-Gate Voltage BVogs . Gate-to-Source Voltage +40V. Operating and Storage Temperature -55°C to +150°C ‘Soldering Temperature” 300°C Note 1: See Package Outline section for discrete pinouts. “Distance of 1.6 mm from case for 10 seconds. B11
SUPERTEX INC a1 pe fs773e35 OO01b81 1 | j . \\VN6O35L Thermal Characteristics 7-35-25 1, (continuous)* Power Dissipation] 6, @T, = 25°C ecw [ro-92 | ttoma 00a was 70 ttoma ]s00ma | . “fy (eamtinuous) I ited by max rated 7, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) Symbol [Parameter | Min [typ [Max [unit | Conditions | Drain-to-Source Breakdown Voltage [600 [TV | Vag = 0,15 = 10024 | Gate Threshold Voltage [08 [| 28 | V | Vos=Vos:lo= tmA i [Tess | te Boy Leakage a | Zero Gate Voltage Drain Current | 60 | Vas = 0; Vg = Max Rating | Vag = 0; Vp, = 0.8 Max Rating | T,= 125°C | Static Drain-Source ON-State Voltage [|| (1-75 | V__ | Vog= 10V,1,=50mA | Static Drain-to-Source Veg = 10V, |, = 50mA’ | ON-State Resistance | | Sis | Forward Transcondustenes CS a | ipa Capacance Ly | it Vgg = 0, Vog = 25V Common Source Output Capacitance [|| 20 | fe MHz | Cass | Reverse Transfer Capacitance a | : | fuoey | Turn OFF Delay Time PTT t00 Ts | Yoo = 25¥, Ig = SOmA, Re = 502 . Diode Forward Voltage Drop [Tf 2 [VY Vos= 01g = 110mA, T= 25°C | ' Noto; AID. paramolre 100% asad al 25° unas otberwie lated (Puce wat 900, pulse, 2% duly oye) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit Yoo i 0% AL 10%. "puss teow OFF) | GENERATOR | ‘SCOPE i i Dut, lore | ouput ! , soa | 10% 10% | H I + oon hors io de + i 8-112 1 Me EES a a