VN4012 SUTEX | Alldatasheet
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. S G D
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W VN3515L (TO-92) 150mA 600mA 1W 125 170 150mA 600mA VN4012L (TO-92) 160mA 650mA 1W 125 170 160mA 650mA ID (continuous) is limited by max rated Tj. VN3515L/VN4012L Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS VN3515 350 VN4012 400 V GS(th) Gate Threshold Voltage 0.6 1.8 V V GS = VDS, ID = 1mA IGSS Gate Body Leakage 10 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 V GS = 0V, VDS = 0.8 Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.15 0.3 A V DS = 10V, VGS = 4.5V 9.5 15 V GS = 4.5V, ID = 100mA 17 35 V GS = 4.5V, ID = 100mA, TA = 125°C 9.5 12 V GS = 4.5V, ID = 100mA 17 30 V GS = 4.5V, ID = 100mA, TA = 125°C GFS Forward Transconductance 125 350 m V DS =15V, ID = 100mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 30 pF CRSS Reverse Transfer Capacitance 10 td(ON) Turn-ON Delay Time 20 tr Rise Time 20 td(OFF) Turn-OFF Delay Time 65 tf Fall Time 65 VSD Diode Forward Voltage Drop 1.2 V V GS = 0V, ISD = 160mA Notes: 2. All A.C. parameters sample tested. 3. See TN2540 data sheet for characteristic curves. Drain-to-Source Breakdown Voltage VV GS = 0V, ID = 100µA Static Drain-to-Source ON-State Resistance RDS(ON) VN3515 VN4012 Switching Waveforms and Test Circuit Ω Electrical Characteristics (@ 25°C unless otherwise specified) ns VDS = 25V, VGS = 0V f = 1MHz VDD = 25V ID = 100mA RGEN = 25Ω 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Ω