VN3205

VN3205 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-92 D1 D4 G1 G4 S1 S4 NC NC S2 S3 G2 G3 D2 D3 Package Options Note: See Package Outline section for dimensions. top view 14-pin DIP TO-243AA (SOT-89) S G D G D S D BVDSS /R DS(ON) VGS(th) Order Number / Package BVDGS (max) (max) TO-92 14-Pin P-DIP TO-243AA* Die † 50V 0.3 Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available

Ordering Information

N-Channel Enhancement-Mode Vertical DMOS FETs Product marking for TO-243AA: VN2L❋ Where ❋ = 2-week alpha date code

Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 50 V V GS = 0V, ID = 10mA VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS, ID = 10mA ∆VGS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/ °CV GS = VDS, ID = 10mA IGSS Gate Body Leakage 1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 3.0 14 A V GS = 10V, VDS = 5V RDS(ON) TO-92 and P-DIP 0.45 Ω VGS = 4.5V, ID = 1.5A SOT-89 0.45 Ω VGS = 4.5V, ID = 0.75A TO-92 and P-DIP 0.3 Ω VGS = 10V, ID = 3A SOT-89 0.3 Ω VGS = 10V, ID = 1.5A ∆RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/ °CV GS = 10V, ID = 3A GFS Forward Transconductance 1.0 1.5 V DS = 25V, ID = 2A CISS Input Capacitance 220 300 COSS Common Source Output Capacitance 70 120 pF CRSS Reverse Transfer Capacitance 20 30 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.6 V V GS = 0V, ISD = 1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1A Notes: 2. All A.C. parameters sample tested. Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W SOT-89 1.5A 8.0A 1.6W (T A = 25°C) 15 78 † 1.5A 8.0A * ID (continuous) is limited by max rated T j. TA = 25°C. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. ‡ Total for package. VN3205 Electrical Characteristics (@ 25°C unless otherwise specified) ns Thermal Characteristics VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V ID = 2A RGEN = 10Ω Static Drain-to-Source ON-State Resistance Ω Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen

VDS (volts) VDS (volts) VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics Maximum Rated Safe Operating Area 0 100101 1.0 0.1 .01 ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 04 2 GFS (siemens) ID (amperes) Power Dissipation vs. Temperature 0 15010050 2.0 1.6 1.2 0.8 0.4 1257525 TC (°C) PD (watts) P-DIP TO-243AA (T A = 25 °C) TO-92 TA = -55 °C 01 0 2 0 3 0 5 0 40 0246 1 0 8 125°C 61 0 8 10V 10V TO-92 (pulsed) P-DIP (pulsed) TO-243AA (DC) TO-92 (DC) P-DIP (DC) VGS = VGS = VDS = 25V TO-243AA TA = 25 °C PD = 1.6W TO-243AA (pulsed) TC = 25°C TO-92 PD = 1W TC = 25 °C 25°C Typical Performance Curves VN3205

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) V DS(ON)GS(th) and R Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 300 C (picofarads) VDS (volts) ID (amperes) BV 01 0 2 03 04 0 100 400 200 02468 1 0 -50 0 50 100 150 1.1 1.0 1.0 0.8 0.6 0.4 0.2 1.2 1.1 1.0 0.9 0.8 0.7 012 3 45 -50 0 50 100 150 325 pF VDS = 40V VDS = 10V VGS = 4.5V VGS = 10V T = -55°CA VDS = 25V 125°C 048 1 2 2 0 16 f = 1MHz CISS COSS CRSS 0.9 215 pF 1.6 1.4 1.2 1.0 0.8 0.6 VGS(th) @ 1mA 25°C RDS(ON) @ 10V, 3A VN3205 Typical Performance Curves