VN2460N8-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

Applications

Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) N-Channel Enhancement-Mode Vertical DMOS FETs

Ordering Information

Package Options BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (mA)TO-92 TO-243AA (SOT-89) VN2460 VN2460N3-G VN2460N8-G 600 20 250 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55°C to +150°C Soldering temperature* +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) TO-243AA (SOT-89) (N8) GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN Product Marking VN4FW W = Code for week sealed = “Green” Packagin g TO-92 (N3) YY = Year Sealed WW = Week Sealed = “Green” Packaging SiVN 2 4 6 0 YYW W TO-243AA (SOT-89) (N8) Pin Configurations General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or

  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Thermal Characteristics Package ID (continuous)* (mA) ID (pulsed) (mA) Power Dissipation @TA = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (mA) TO-92 160 500 0.74 125 170 160 500 TO-243AA 200 600 1.6 15 78 200 600 Notes: † ID (continuous) is limited by max rated TJ, ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (TA = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 600 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 1.5 - 4.0 V VGS = VDS, ID = 2.0mA ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID = 2.0mA IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V IDSS Zero gate voltage drain current - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current 0.25 - - A VGS = 10V, VDS = 25V RDS(ON) Static drain-to-source on-state resistance - - 25 Ω VGS = 4.5V, ID = 100mA - - 20 VGS = 10V, ID = 100mA ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/OC VGS = 10V, ID = 100mA GFS Forward transconductance 50 - - mmho VDS = 25V, ID = 100mA CISS Input capacitance - - 150 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common source output capacitance - - 50 CRSS Reverse transfer capacitance - - 25 td(ON) Turn-on delay time - - 10 ns VDD = 25V, ID = 250mA, RGEN = 25Ω tr Rise time - - 10 td(OFF) Turn-off delay time - - 25 tf Fall time - - 20 VSD Diode forward voltage drop - - 1.5 V VGS = 0V, ISD = 400mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves VGS = 10V 0 10 2 0 30 40 5 00 0.2 0.4 0.6 0.8 1.0 1.2 ID )serepmA( VDS (Volts) Output Characteristics 0 2 4 6 8 1 0 0.1 0.2 0.3 0.4 0.5 Saturation Characteristics ID )serepmA( VDS (Volts) VGS = 10V 0.1 0.2 0.3 0.4 0.5 TA = -55OC TA = 25OC TA = 125OC VDS = 25V Transconductance vs. Drain Current G SF )snemeis( ID (Amperes) Power Dissipation vs. Temperature PD )sttaW( TA (OC) 0 50 75 100 125 1500 0.4 0.8 1.2 1.6 2.0 TO-92 SOT -89 ID )serepma( VDS (Volts) Maximum Rated Safe Operating Area TO-92 (DC ) SOT-89 (DC ) SOT-89 (pulsed ) TO-92 (pulsed ) TC = 25 OC 0.01 0.1 1.0 0.001 1 100010010 Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.1 1.0 SOT-8 9 PD = 1.6W TC = 25 OC tp (seconds) TO-9 2 PD = 1W TC = 25 OC
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) VGS = 4.5V VGS = 10V R )NO(SD )smho( ID (Amperes) On Resistance vs. Drain Current -50 -25 0 25 5 0 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(th) @ 2mA RDS(on) @ 10V, 0.1A VGS(TH) and RDS(ON) w/ Temperature V )ht(SG )dezilamron( Tj (°C) R )NO(SD )dezilamron( Transfer Characteristics ID )serepmA( VGS (Volts) 0 2 4 6 8 1 0 0.1 0.2 0.3 0.4 0.5 VDS = 25V TA = -55°C TA = 125°C TA = 25°C VB SSD )dezilamroN( Tj (°C) BVDSS Variation with Temperature -50 0 50 100 1500.8 0.9 1.0 1.1 1.2 Capacitance vs. Drain Source Voltage C )sdarafocip( VDS (volts) 0 10 20 3 0 4 00 150 225 300 f = 1MHz CISS COSS CRSS Gate Drive Dynamic Characteristics Q (nanocoulombs)G V SG )stlov( VDS=10V VDS=40V ID = 0.5A
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications ©2008 All rights reserved. Unauthorized use or reproduction is prohibited .

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VN2460 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2460 A011409 3-Lead TO-243AA (SOT-89) Package Outline (N8) Symbol A b b1 C D D1 E E1 e e1 H L Dimensions (mm) 1.50 BSC 3.00 BSC 3.94 0.89 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. b b1

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Supertex: VN2460N3-P014-G VN2460N3-P013-G VN2460N3-P003-G VN2460N8-G VN2460N3-G VN2460N3-P002 VN2460N3-P013 VN2460N3-P003 VN2460N3-P014 VN2460N3 VN2460N3-P002-G VN2460N8 VN2460N3-G P013 VN2460N3-G P014 VN2460N3-G P003 VN2460N3-G P002 VN2460N3-G P005