VN2460 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) BVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 TO-243AA* Die** 600V 20 Ω 0.25A VN2460N3 VN2460N8 VN2460NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form.

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-243AA (SOT-89) G D S D TO-92 S G D Order Number / Package Product marking for TO-243AA: VN4F❋ Where ❋ = 2-week alpha date code

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 0.16A 0.5A 1W 125 170 0.16A 0.5A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS 600 VGS(th) Gate Threshold Voltage 1.5 V V GS = VDS , ID = 2.0mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CV GS = VDS , ID = 2.0mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.25 A V GS = 10V, VDS = 25V RDS(ON) 25 V GS = 4.5V, ID = 100mA

20 V GS = 10V, ID = 100mA

∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = 10V, ID = 100mA GFS Forward Transconductance 50 mV DS = 25V, ID = 100mA CISS Input Capacitance 150 COSS Common Source Output Capacitance 50 pF CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.5 V V GS = 0V, ISD = 400mA Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VV GS = 0V, ID = 2.0mA ns VGS = 0V, VDS = 25V f = 1.0 MHz VDD = 25V, ID = 250mA, RGEN = 25Ω Ω Ω Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen VN2460

Typical Performance Curves VGS = 10V 01 0 2 03 04 05 0 0.2 0.4 0.6 0.8 1.0 1.2 ID (Amperes) VDS (Volts) Output Characteristics 02468 1 0 0.1 0.2 0.3 0.4 0.5 Saturation Characteristics ID (Amperes) VDS (Volts) VGS = 10V 0.1 0.2 0.3 0.4 0.5 TA = -55°C TA = 25°C TA = 125°C VDS = 25V Transconductance vs. Drain Current GFS (siemens) ID (Amperes) Power Dissipation vs. Case Temperature PD (Watts) TC (°C) 05 0 7 5 100 125 1500 0.4 0.8 1.2 1.6 2.0 TO-92 SOT -89 ID (amperes) VDS (Volts) Maximum Rated Safe Operating Area TO-92 (DC) SOT-89 (DC) SOT-89 (pulsed) TO-92 (pulsed) TC = 25 °C 0.01 0.1 1.0 0.001 1 100010010 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 SOT-89 PD = 1.6W TC = 25 °C tp (seconds) TO-92 PD = 1W TC = 25 °C VN2460

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Typical Performance Curves VGS = 4.5V VGS = 10V RDS(ON) (ohms) ID (Amperes) On Resistance vs. Drain Current -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(th) @ 2mA RDS(on) @ 10V, 0.1A VGS(TH) and RDS(ON) w/ Temperature VGS(th) (normalized) TJ (°C) RDS(ON) (normalized) Transfer Characteristics ID (Amperes) VGS (Volts) 02468 1 0 0.1 0.2 0.3 0.4 0.5 VDS = 25V TA = -55°C TA = 125°C TA = 25°C BVDSS (Normalized) TJ (°C) BVDSS Variation with Temperature -50 0 50 100 1500.8 0.9 1.0 1.1 1.2 Capacitance vs. Drain Source Voltage C (picofarads) VDS (volts) 01 0 2 0 3 04 00 150 225 300 f = 1MHz CISS COSS CRSS Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) VDS=10V VDS=40V ID = 0.5A VN2460