VN2406 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) S G D

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Thermal Characteristics VN2406/VN2410 Symbol Parameter Min Typ Max Unit Conditions BVDSS 240 VGS(th) Gate Threshold Voltage 0.8 2 V V GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = 120V 500 µAV GS = 0V, VDS = 120V TA = 125°C ID(ON) ON-State Drain Current 1.0 A V GS = -10V, VDS = 15V RDS(ON) All 10 V GS = 2.5V, ID = 0.1A VN2410 10 Ω VGS = 10V, ID = 0.5A VN2406 6 V GS = 10V, ID = 0.5A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 1.4 %/ °CV GS = 10V, ID = 0.55A GFS Forward Transconductance 300 m V DS = 10V, ID = 0.5A CISS Input Capacitance 125 COSS Common Source Output Capacitance 50 pF CRSS Reverse Transfer Capacitance 20 td(ON) Turn-ON Delay Time 8 tr Rise Time 8 td(OFF) Turn-OFF Delay Time 23 tf Fall Time 24 VSD Diode Forward Voltage Drop VN2410 1.2 V V GS = 0V, ISD = 0.19A VN2406 1.2 V V GS = 0V, ISD = 0.8A Notes: 2. All A.C. parameters sample tested. VV GS = 0V, ID = 0.1mADrain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = 25V f = 1 MHz Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 60V ID = 0.4A RGEN = 25Ω ns Switching Waveforms and Test Circuit Ω Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W * ID (continuous) is limited by max rated T j.