VN2406L-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain

Applications

► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon- gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Enhancement-Mode Vertical DMOS FET

Ordering Information

(V) RDS(ON) (max) (Ω) ID(ON) (min) (A)TO-92 VN2406 VN2406L-G 240 6.0 1.0 Pin Configuration TO-92 (L) GATE SOURCE DRAIN YY = Year Sealed WW = Week Sealed = “Green” Packaging Si VN 2406L YYWW TO-92 (L) Product Marking Package may or may not include the following marks: Si or Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Absolute Maximum Ratings For packaged products, -G indicates package is RoHS compliant (‘Green’). Consult factory for die / wafer form part numbers. Refer to Die Specification VF25 for layout and dimensions.

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% Pulse Generator VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF)tr INPUT INPUT OUTPUT 10V VDD RGEN tf BVDSS Drain-to-source breakdown voltage 240 - - V VGS = 0V, ID = 100µA VGS(th) Gate threshold voltage 0.8 - 2.0 V VGS = VDS, ID = 1.0mA IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V IDSS Zero gate voltage drain current - - 10 µA VGS = 0V, VDS = 120V - - 500 VGS = 0V, VDS = 120V, TA = 125°C ID(ON) On-state drain current 1.0 - - A VGS = 10V, VDS = 15V RDS(ON) Static drain-to-source on-state resistance - - 10 Ω VGS = 2.5V, ID = 100mA - - 6.0 VGS = 10V, ID = 500mA ΔRDS(ON) Change in RDS(ON) with temperature - 1.0 1.4 %/OC VGS = 10V, ID = 500mA GFS Forward transductance 300 - - mmho VDS = 10V, ID = 500mA CISS Input capacitance - - 125 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common source output capacitance - - 50 CRSS Reverse transfer capacitance - - 20 tr Rise time - - 8.0 ns VDD = 60V, ID = 400mA, RGEN = 25Ω td(ON) Turn-on delay time - - 8.0 tf Fall time - - 24 td(OFF) Turn-off delay time - - 23 VSD Diode forward voltage drop - 1.2 - V VGS = 0V, ISD = 800mA Notes: 2. All A.C. parameters sample tested. Package ID (continuous)† (mA) ID (pulsed) (A) Power Dissipation @TC = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (A) TO-92 190 1.7 1.0 125 170 190 1.7

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VN2406 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2406 C031411 3-Lead TO-92 Package Outline (L) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Supertex: VN2406L-P003-G VN2410L-P014-G VN2410L-P002-G VN2406L-P014-G VN2406L-P002-G VN2410L-G VN2410L-P003-G VN2406L-P013 VN2406L-P002 VN2406L-P014 VN2406L-P003 VN2410L-P014 VN2410L-P013 VN2410L-P003 VN2410L-P002 VN2410L VN2410L-P013-G VN2406L-P013-G VN2406L-G VN2406L VN2406L-G P002 VN2406L-G P013 VN2406L-G P005 VN2406L-G P014 VN2406L-G P003