VN2224_13 SUTEX | Alldatasheet
Document overview
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Technical content
Features
► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain
Applications
► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 Product Marking Package may or may not include the following marks: Si or Pin Configuration TO-92 GATE SOURCE DRAIN Product Summary BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) 240V 1.25Ω 5.0A Typical Thermal Resistance Package θja TO-92 132OC/W
Ordering Information
Part Number Package Option Packing VN2224N3-G TO-92 1000/Bag VN2224N3-G P002 TO-92 2000/Reel VN2224N3-G P003 VN2224N3-G P005 VN2224N3-G P013 VN2224N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Supertex inc. www.supertex.com Doc.# DSFP-VN2224 C082013 VN2224 Electrical Characteristics (TA = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 240 - - V VGS = 0V, ID = 5.0mA VGS(th) Gate threshold voltage 1.0 - 3.0 V VGS = VDS, ID = 5.0mA ΔVGS(th) Change in VGS(th) with temperature - -4.0 -5.0 mV/OC VGS = VDS, ID = 5.0mA IGSS Gate body leakage current - 1.0 100 nA VGS = ±20V, VDS = 0V IDSS Zero gate voltage drain current - - 50 µA VGS = 0V, VDS = Max Rating - - 5.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current 2.0 - - A VGS = 5.0V, VDS = 25V 5.0 10 - VGS = 10V, VDS = 25V RDS(ON) Static drain-to-source on-state resistance - 1.0 1.5 Ω VGS = 5.0V, ID = 2.0A - 0.9 1.25 VGS = 10V, ID = 2.0A ΔRDS(ON) Change in RDS(ON) with temperature - 1.0 1.4 %/OC VGS = 10V, ID = 2.0A GFS Forward transconductance 1000 2200 - mmho VDS = 25V, ID = 2.0A CISS Input capacitance - 300 350 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common Source output capacitance - 85 150 CRSS Reverse transfer capacitance - 20 35 td(ON) Turn-on delay time - 6.0 15 ns VDD = 25V, ID = 2.0A, RGEN = 10Ω td(OFF) Turn-off delay time - 65 90 tr Rise time - 16 25 tf Fall time - 30 60 VSD Diode forward voltage drop - 0.8 1.0 V VGS = 0V, ISD = 100mA trr Reverse recovery time - 500 - ns VGS = 0V, ISD = 1.0A Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% Pulse Generator VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF)tr INPUT INPUT OUTPUT 10V VDD RGEN tf Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† ID (pulsed) Power Dissipation @TC = 25OC IDR † IDRM TO-92 540mA 5.0A 1.0W 540mA 5.0A
Supertex inc. www.supertex.com Doc.# DSFP-VN2224 C082013 VN2224 Typical Performance Curves Gate Drive Dynamic Characteristics QG (nanocoulombs) VGS (volts) 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 300 pF VDS = 10V 733 pF VDS = 40V BVDSS (normalized) Tj (OC) BVDSS Variation with Temperature -50 0 50 100 150 1.1 1.0 0.9 On-Resistance vs. Drain Current RDS(ON) (ohms) ID (amperes) 5.0 4.0 3.0 2.0 1.0 VGS = 5.0V 0 2.0 4.0 6.0 8.0 10 VGS = 10V Transfer Characteristics VGS (volts) ID (amperes) 0 2.0 4.0 6.0 8.0 10 8.0 6.0 4.0 2.0 TA = -55OC VDS = 25OC 25OC 125OC VGS(th) (normalized) RDS(ON) (normalized) VGS and RVDS Variation with Temperature 1.4 1.2 1.0 0.8 0.6 0.4 2.4 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 5.0mA RDS(ON) @ 10V, 2.0A Tj (OC) -50 0 50 100 150 Capacitance vs. Drain-to-Source Voltage 400 300 200 100 C (picofarads) VDS (volt) 0 10 20 30 40 f = 1.0MHz CISS COSS CRSS
Supertex inc. www.supertex.com Doc.# DSFP-VN2224 C082013 VN2224 Typical Performance Curves (cont.) Output Characteristics VDS (volts) ID (amperes) Saturation Characteristics VDS (volts) Maximum Rated Safe Operating Area 11 00010010 0.1 0.01 0.001 VDS (volts) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.11 tP (seconds) Transconductance vs. Drain Current 01 05 GFS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 01 5010050 2.0 1.0 1257525 TC(OC) PD (watts) TO-92 TC = 25OC PD = 1.0W TO-92 TA = -55OC VDS = 25V 01 02 03 0 50 40 02 46 108 VGS = 10V TO-92 (DC) TC = 25OC ID (amperes) VGS = 10V TA = 25OC TA = 125OC ID (amperes)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888 www.supertex.com VN2224 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2224 C082013 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A