VN2224

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Note: See Package Outline section for dimensions. top viewTO-92 S G D 20-pin Ceramic DIP

Ordering Information

Order Number / PackageBV DSS /R DS(ON) ID(ON) BV DGS (max) (min) TO-92 20-Pin C-Dip 220V 1.25 Ω 5.0A — VN2222NC 240V 1.25 Ω 5.0A VN2224N3 — S S S S S S S S NC NC S S

Symbol Parameter Min Typ Max Unit Conditions BV DSS VV GS = 0V, ID = 5mA VGS(th) Gate Threshold Voltage 1.0 3.0 V V GS = VDS , ID = 5mA ∆V GS(th) Change in VGS(th) with Temperature -4 -5 mV/ °CV GS = VDS , ID = 5mA IGSS Gate Body Leakage 1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 50 µAV GS = 0V, VDS = Max Rating 5m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 2 V GS = 5V, VDS = 25V 51 0 V GS = 10V, VDS = 25V R DS(ON) 1.0 1.5 V GS = 5V, ID = 2A 0.9 1.25 V GS = 10V, ID = 2A ∆R DS(ON) Change in RDS(ON) with Temperature 1.0 1.4 %/ °CV GS = 10V, ID = 2A G FS Forward Transconductance 1.0 2.2 V DS = 25V, ID = 2A C ISS Input Capacitance 300 350 C OSS Common Source Output Capacitance 85 150 pF C RSS Reverse Transfer Capacitance 20 35 td(ON) Turn-ON Delay Time 6 15 tr Rise Time 16 25 td(OFF) Turn-OFF Delay Time 65 90 tf Fall Time 30 60 VSD Diode Forward Voltage Drop 0.8 1.0 V V GS = 0V, ISD = 100mA trr Reverse Recovery Time 500 ns V GS = 0V, ISD = 1A Notes: 2. All A.C. parameters sample tested. Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 540mA 5.0A 1.0W 125 170 540mA 5.0A *ID (continuous) is limited by max rated Tj. Thermal Characteristics 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Switching Waveforms and Test Circuit Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage A VN2222/VN2224 ΩStatic Drain-to-Source ON-State Resistance Ω VDD = 25V ID = 2A R GEN = 10Ω VGS = 0V, VDS = 25V f = 1 MHz ns VN2224 240 VN2222 220

Typical Performance Curves VN2222/VN2224 Output Characteristics VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics VDS (volts) Maximum Rated Safe Operating Area 1 100010010 0.1 0.01 0.001 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 01 0 5 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 15010050 1257525 TC (°C) PD (watts) TO-92 TC = 25°C PD = 1W TO-92 TA = -55°C VDS = 25V 01 0 2 0 3 0 5 0 40 0246 1 0 8 VGS = 10V TA = 25°C TA = 125°C VGS = 10V TO-92 (DC) TC = 25°C

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TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Typical Performance Curves VN2222/VN2224 Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj (°C) VGS(th) (normalized) R DS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 400 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 01 0 2 03 04 0 300 200 02468 1 0 -50 0 50 100 150 1.1 1.0 1.4 1.0 0.4 024 6 81 0 -50 0 50 100 150 300 pF VDS = 40V VDS = 10V V GS = 5V VGS = 10V TA = -55°C VDS = 25V 125°C 0246 1 0 8 f = 1MHz C ISS C OSS C RSS 0.9 733 pF 0.6 0.8 1.2 2.4 2.0 1.6 1.2 0.8 0.4 Vth @ 5mA 25°C 100 R DS @ 10V, 2A