VN2222LL SUTEX | Alldatasheet

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 30V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. S G D

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Thermal Characteristics VN2222LL Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 60 V V GS = 0V, ID= 100µA VGS(th) Gate Threshold Voltage 0.6 2.5 V V GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = Max Rating 500 µAV GS = 0V, VDS = 48V TA = 125°C ID(ON) ON-State Drain Current 0.75 A V GS = 10V, VDS = 10V RDS(ON) Static Drain-to-Source ON-State Resistance 7.5 Ω VGS = 5V, ID = 0.2A 7.5 Ω VGS = 10V, ID = 0.5A GFS Forward Transconductance 100 m V DS = 10V, ID = 0.5A CISS Input Capacitance 60 COSS Common Source Output Capacitance 25 pF CRSS Reverse Transfer Capacitance 8 t(ON) Turn-ON Time 10 t(OFF) Turn-OFF Time 10 VSD Diode Forward Voltage Drop 0.85 V V GS = 0V, ISD = 0.2A Notes: 2. All A.C. parameters sample tested. VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 15V, ID = 0.6A RGEN = 25Ω Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Ω Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 0.23A 1.0A 1W 125 170 0.23A 1.0A * ID (continuous) is limited by max rated T j.