VN2210 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) N-Channel Enhancement-Mode Vertical DMOS FETs Package Options Note: See Package Outline section for dimensions. S G D D G S Case: DRAIN BV DSS /R DS(ON) ID(ON) BV DGS (max) (min) TO-39 TO-92 100V 0.35 Ω 8A VN2210N2 VN2210N3 † MIL visual screening available

Ordering Information

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T C = 25°C °C/W °C/W *ID (continuous) is limited by max rated Tj. VN2210 Drain-to-Source Breakdown Voltage Electrical Characteristics (@ 25°C unless otherwise specified) A Static Drain-to-Source ON-State Resistance ns Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V ID = 2A R GEN = 10Ω Ω Ω Symbol Parameter Min Typ Max Unit Conditions BV DSS 100 V V GS = 0V, ID = 10mA VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS , ID = 10mA ∆V GS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/ °CV GS = VDS , ID = 10mA IGSS Gate Body Leakage 1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 50 µAV GS = 0V, VDS = Max Rating 10 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 3 4.5 V GS = 5V, VDS = 25V 81 7 V GS = 10V, VDS = 25V R DS(ON) 0.4 0.5 V GS = 5V, ID = 1A 0.27 0.35 V GS = 10V, ID = 4A ∆R DS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/ °CV GS = 10V, ID = 4A G FS Forward Transconductance 1.2 V DS = 25V, ID = 2A C ISS Input Capacitance 300 500 C OSS Common Source Output Capacitance 125 200 pF C RSS Reverse Transfer Capacitance 50 65 td(ON) Turn-ON Delay Time 10 15 tr Rise Time 10 15 td(OFF) Turn-OFF Delay Time 50 65 tf Fall Time 30 50 VSD Diode Forward Voltage Drop 1.0 1.6 V V GS = 0V, ISD = 4A trr Reverse Recovery Time 500 ns V GS = 0V, ISD = 1A Notes: 2. All A.C. parameters sample tested.

Typical Performance Curves VN2210 Output Characteristics VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics VDS (volts) Maximum Rated Safe Operating Area 0.1 100 101 0.1 0.01 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tP (seconds) Transconductance vs. Drain Current 4.0 3.2 2.4 1.6 0.8 0 1.60.8 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 15010050 1257525 TC (°C) PD (watts) TO-92 TC = 25°C PD = 1W TO-92 TO-39 TA = -55°C VDS = 25V 01 0 2 0 3 0 5 0 40 0246 1 0 8 25°C 150°C VGS = 10V 8V8V VGS = 10V 2.4 4.0 3.2 TC = 25°C TO-92 (pulsed) TO-39 (pulsed) TO-92 (DC) TO-39 (DC)

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 07/08 /02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Typical Performance Curves VN2210 Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj (°C) GS(th)V (normalized) R DS(ON) (normalized) V DS(ON)GS(th)and R Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 500 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 01 0 2 03 04 0 375 250 02468 1 0 -50 0 50 100 150 1.1 1.0 1.0 0.8 0.6 0.4 0.2 1.2 1.1 1.0 0.9 0.8 0.7 024 6 81 0 -50 0 50 100 150 300 pF VDS = 40V VDS = 10V V GS = 5V VGS = 10V TA = -55°C VDS = 25V 150°C 048 1 2 2 0 16 f = 1MHz C ISS C OSS C RSS 0.9 900 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 10mA 25°C 125 R DS(ON) @ 10V, 4A