VN22A SUTEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SUPERTEX INC 35E D M@™ 8773295 0002290 2 MBSTX . Si “ ts ee - VN22A Super Ce ® N-Channel Enhancement-Mode = 735-25 Vertical DMOS FETs :
Ordering Information
BVogs / Order Number / Package .
0.352 VN2204N3_ | VN2204ND)
[cov [eas [ea _[vnaanena _[_wwa0en0 tov | oasa | 8A | _VN22i0Na | VN2210ND ¥” mit vieual ereoring avallblo Features Advanced DMOS Technology (Free from secondary breakdown ‘These enhancement-made(normaly-off) powertransistors utilize _ er drive requirement a vertical OMOS structure and Supertex’s well-proven silicon- -ow power drive requirement gate manufacturing process. This combination produces devices C Ease of paralleling with the power handling capabilities of bipolar transistors and with , the high input impedance and positive temperature coatficient 1 Low Cigs and fast switching speeds inherent in MOS devices. Characteristio of all MOS structures, So (Excellent thermal stablity these devices are free from thermal runaway and thermally- (Integral Source-Drain diode Induced secondary breakdown. High input impedance and high gain ‘Supertex Vertical DMOS FETs are ideally sulted to a wide range of switching and amplifying applications where high breakdown C. Complementary N- and P-Channel devices voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications vs
2 Motor conta Package Options (Note 1)
© Converters G Ampitiers © Switches (1 Power supply circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings i Drain-to-Source Voltage 8Voss Drain-to-Gate Voltage BVpas Toe Gate-to-Source Voltage #200 Operating and Storage Temperature “55°C to +150°C Soldering Temperature* 300°C + Distance of 1.6 mm from case for 10 seconds. . Noto 1: See Package Ouline secton lor dscrate pinouts. 8-87
SUPERTEX INC 35E D MM 8773295 GO0229) 4 MMSTX VN22A Thermal Characteristics 1-35-25 Ip (continuous)* Power Dissipation] 4 Oe lon® @T.= 25°C “cw °C [rose tz Toa tow io tas 2a [aoa] * Ip (continuous) is limited by max rated T}. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [Symbor [Parameter [in [typ [wax [unt [Conditions] BVoss Drain-to-Source | _vne2o4 [40 | Breakdown Voltage [ wwaz08 [60 | v Vos =, Ip = 10mA [wnzaio | 00 | Gate Threshold Voltage [oe || 24 | Vv | Vas= Vos. lo = 10mA [aves | ChangoinVeumwih Tempore [| 48 | 88 | aWE | VosVoelomtOnA | [tess | Gate Boa teakege P| 00 | Vast 200,Yon=0 | Zero Gate Voltage Drain Current [50 | BA | Vas=0, Vog = Max Rating Vas = 0, Vos = 0.8 Max Rating T= 125°C [et | ON-State Resistance |_o4 | 05 | pees [oar [as | Change in Rosow with Temperature | (| 085 | 12 | %FC | Vas=10V,p=4A | Ges | Forward transconductance | tS | 20 | | 8 | Voge 25Vb=2A | a Vas = 0, Vos = 25V. | Coss __| Common Source Output Capacitance ‘os = 0. Vos Coss pul Cap [Jeo Vee 0.¥ [Cras | Revs TrastrCapactanee (| a8 | | taow | Tum-ONDetayTime | to | | Vop = 25V oo = TunOFF ely Tire [|e [0 | Fg = 500 a | Veo | Diode Forward Voltage Drop || 10 [16 TV Vos Ole 4A | [i [ Reverse Recoveyting | | a0 || te | Voge lent Notes: 1: All D.C, parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300ms pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit r oo tov co fu . wneur wane, 10%. H PULSE I w Aor | geheRaTon | OUTPUT I Out. Laon]. leon, | | ! . son ourpur 1 Lt | ow 0%) fa0% 1 FF + ; 8-88