VN2106 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Commercial and Military versions available ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ High input impedance and high gain

Applications

❏ Motor controls ❏ Amplifiers ❏ Power supply circuits ❏ Converters ❏ Switches ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Note: See Package Outline section for dimensions. N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / PackageBVDSS /R DS(ON) BVDGS (max) TO-92 TO-236AB* Die † 60V 4.0 Ω VN2106N3 – — 100V 4.0 Ω — VN2110K1 VN2110ND †MIL visual screening available *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Product marking for SOT-23: N1A❋ where ❋ = 2-week alpha date code

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-236AB (SOT-23) top view TO-92 S G D S D G

Package I D (continuous)✝ ID (pulsed) Power Dissipation* θjc θja IDR † IDRM @ TC = 25°C °C/W °C/W † ID (continuous) is limited by max rated T j. * Total for package. Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source VN2110 100 VI D = 1mA, VGS = 0V Breakdown Voltage VN2106 60 VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/ °CV GS = VDS, ID = 1mA IGSS Gate Body Leakage 0.1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 µAV GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.6 A V GS = 10V, VDS = 25V RDS(ON) Static Drain-to-Source 4.5 6.0 Ω VGS = 5V, ID = 75mA ON-State Resistance 3.0 4.0 Ω VGS = 10V, ID = 500mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.70 1.0 %/ °CV GS = 10V, ID = 500mA GFS Forward Transconductance 150 400 m V DS = 25V, ID =0.5A CISS Input Capacitance 35 50 COSS Common Source Output Capacitance 13 25 pF V GS = 0V, VDS = 25V, f = 1MHz CRSS Reverse Transfer Capacitance 4 5 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 V I SD = 0.6A, VGS = 0V trr Reverse Recovery Time 400 ns I SD = 0.6A, VGS = 0V Notes: 2. All A.C. parameters sample tested. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen VN2106/VN2110 Switching Waveforms and Test Circuit Electrical Characteristics (@ 25°C unless otherwise specified) Thermal Characteristics VDD = 25V ns I D = 0.6A RGEN = 25Ω Ω

Typical Performance Curves Output Characteristics 2.0 1.6 1.2 0.8 0.4 VDS (volts) V DS (volts) ID (amperes) ID (amperes) Saturation Characteristics Maximum Rated Safe Operating Area 0.1 100 101 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 0 0.40.2 GFS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 15010050 2.0 1.0 1257525 TC (°C) PD (watts) TO-92 PD = 1W TC = 25 °C TO-92 TA = -55°C VDS = 25V 01 0 2 0 3 0 5 0 40 0246 1 0 8 25°C 125°C VGS = 0.6 1.0 0.8 10V 2.0 1.6 1.2 0.8 0.4 10V VGS = TO-92 (DC) TA = 25 °C TO-92 (pulsed) TO-236AB 1.0 0.1 0.01 SOT-23 (pulsed) SOT-23 (DC) TO-236AB PD = 0.36W TA = 25 °C VN2106/VN2110

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Typical Performance Curves Gate Drive Dynamic Characteristics QG (nanocoulombs) VGS (volts) Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) VGS(th) and RDS(ON) Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) BVDSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage C (picofarads) VDS (volts) ID (amperes) BVDSS Variation with Temperature 01 0 2 03 04 0 02468 1 0 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 150 1.1 1.0 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 30 pF VDS = 40V VDS = 10V VGS = 5V VGS = 10V TA = -55°C VDS = 25V 125°C f = 1MHz CISS COSS CRSS 0.9 90 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA25°C RDS(ON) @ 10V, 0.5A VN2106/VN2110