VN1550 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
Applications
❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.
Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Symbol Parameter Min Typ Max Unit Conditions BVDSS 500 V V GS = 0V, ID = 1mA VGS(th) Gate Threshold Voltage 2 4 V V GS = VDS , ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/ °CV GS = VDS , ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 100 V GS = 5V, VDS = 25V 150 350 V GS = 10V, VDS = 25V RDS(ON) 45 V GS = 5V, ID = 50mA 40 60 V GS = 10V, ID = 50mA ∆RDS(ON) Change in RDS(ON) with Temperature 1 1.7 %/ °CV GS = 10V, ID = 50mA GFS Forward Transconductance 50 100 m V DS = 25V, ID = 50mA CISS Input Capacitance 45 55 COSS Common Source Output Capacitance 8 10 pF CRSS Reverse Transfer Capacitance 2 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 10 tf Fall Time 10 VSD Diode Forward Voltage Drop 0.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance mA VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V, ID = 150mA, RGEN = 25Ω ns Ω Ω
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 01/14/02 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.