VN1506 SUTEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
J Free from secondary breakdown J Low power drive requirement J Ease of paralleling J Low CISS and fast switching speeds J Excellent thermal stability J Integral Source-Drain diode J High input impedance and high gain J Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. VN1506 VN1509 Order Number / Package BVDSS / RDS(ON) ID(ON) BVDGS (max) (min) Die† 60V 3.0Ω 2.0A VN01506NW 90V 3.0Ω 2.0A VN1509NW † MIL visual screening available.
Ordering Information
N-Channel Enhancement-Mode Vertical DMOS FET
Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS VN1509 VN1506 VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/°C VGS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = Max Rating 100 µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 1.0 VGS = 5V, VDS = 25V 2.0 2.5 VGS = 10V, VDS = 25V RDS(ON) 3.0 5.0 VGS = 5V, ID = 250mA 2.5 3.0 VGS = 10V, ID = 1A ∆RDS(ON) Change in RDS(ON) with Temperature 0.70 %/°C VGS = 10V, ID = 1A GFS Forward Transconductance 300 450 m VDS = 25V, ID = 0.5A CISS Input Capacitance COSS Common Source Output Capacitance pF CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-OFF Delay Time tf Fall Time VSD Diode Forward Voltage Drop 1.2 1.8 V VGS = 0V, ISD =1.0A trr Reverse Recovery Time 400 ns VGS = 0V, ISD =1.0A Notes: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. A Static Drain-to-Source ON-State Resistance V VGS = 0V, ID = 1mA Drain-to-Source Breakdown Voltage Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V ID = 1A RGEN = 25Ω ns VGS = 0V, VDS = 25V f = 1 MHz Ω
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 03/26/02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.