VN1504 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) Die † 40V 60V 90V 3.0Ω 3.0Ω 3.0Ω 2.0A 2.0A 2.0A VN1504NW VN1506NW VN1509NW † MIL visual screening available.
Ordering Information
N-Channel Enhancement-Mode Vertical DMOS FET
Doc.# DSFP - VN0109 A062306 VN1509 Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS V GS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/°C V GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 V GS = 0V, VDS = Max Rating 100 µA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 1.0 V GS = 5V, VDS = 25V 2.0 2.5 V GS = 10V, VDS = 25V RDS(ON) 3.0 5.0 V GS = 5V, ID = 250mA 2.5 3.0 V GS = 10V, ID = 1A ∆RDS(ON) Change in RDS(ON) with Temperature 0.70 1 %/°C V GS = 10V, ID = 1A GFS Forward Transconductance 300 450 m V DS = 25V, ID = 0.5A CISS Input Capacitance 55 65 COSS Common Source Output Capacitance 20 25 pF CRSS Reverse Transfer Capacitance 5 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 V V GS = 0V, ISD =1.0A trr Reverse Recovery Time 400 ns V GS = 0V, ISD =1.0A Notes: 2. All A.C. parameters sample tested. A Static Drain-to-Source ON-State Resistance VV GS = 0V, ID = 1mADrain-to-Source Breakdown Voltage Electrical Characteristics (@25°C unless otherwise specified) VDD = 25V ID = 1A RGEN = 25Ω ns VGS = 0V, VDS = 25V f = 1 MHz Ω VN1504 VN1506 VN1509