VN13C SUTEX | Alldatasheet

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SUPERTEX INC on de ffaz73295 ooobeY 1 i VN13C Si tex inc. uper . -35-25 ® N-Channel Enhancement-Mode Vertical DMOS Power FETs

Ordering Information

BV p65! Order Number / Package BYoos 70-29 vwraiene_| vnvarens Features Advanced DMOS Technology C Freedom from secondary breakdown ‘These enhancement-mode (normally-off) power transistors util- O Low r drive requirement ize a vertical DMOS structure and Supertex's well-proven silicon- Power drive requi gate manufacturing process. This combination produces c vices C1 Ease of paralieling with the power handling capabilities of bipolar transistors aid with vachi the high input impedance and negative temperature coefficient © Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, Excellent thermal stability these devices are free from thermal runaway and thermally YS © Integral Source-Drain diode Induced secondary breakdown, Supertex Vertical DMOS Power FETs are ideally suited to a wide © High input impedance and high gain range of switching and amplifying applications where high break- © Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) © Motor control © Converters OG Amplifiers

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| © Power supply circuits O Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) : 1099 rose | Absolute Maximum Ratings Drain-to-Source Voltage BV p55 | Drain-to-Gate Voltage BVias Gate-to-Source Voltage +20V Operating and Storage Temperature -55°C to +150°C. Saidering Temperaiae™ 3076 Note 1: S00 Package Outne section fr dscrete pout. “Distance of 1.6 mm from case for 10 seconds. 8-95

SUPERTEX INC OL DE G}87?73295 OOObES 3 I | . N13 | Thermal Characteristics 7-35-2zS | i . |, (continuous)* Power Dissipation lon ! . @T, = 25°C j [ros | ream | aoona | sow |e | ats | ma | asama | “Ig (continuous) is limited by max rated T, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) ee BVDSS Drain-to-Source JyvNia20 | 200 J Breakdown Voltage [yniaig | _ 160 Vv | Ip=1mA, Ves=0 Vestn) | Gate Threshold Voltage | 8 | [88 | V | vGs=Vos.io=tmA | [Aves(th) | Change in VGsith) with Temperature [|= 2.0 |-4.0 | mv/'c | Vas = Vos, 1D = 1mA ' [“icss [Gate Gody Leakage | «dt 100 nA | Voss 220V, Vos=0 ‘ Zero Gate Voltage Drain Curent [10] uA | VGS=0, VDS = 0.8 Max Rating Ta = 125°C [250 [300 |_| mA | Ves = 10V, Vos = 251 ‘Static Drain-to-Source [30 | 40 | VGS=5V, ID =50mA ON-State Resistance [25 | 40 | VGs = 10V, ID = 100mA ARDS(ON) | Change in ROS(ON) with Temperatore| [0.8 | 20 | wc [1D=T00mA,ves=iov [Ciss_ | Inout Capacitance Sid S| i | [Coss | Common Source Output Capacitance |__| 10 | 15_| Ves =0, Vos = 25V | Cass | Reverse Transfer Capacitance || 3 [6 f= 1 Me [a(onp | Tum-On Detry Time || ST [cw | RiseTime Cr CP 2 Vop = 25V | tl) | Turn-OFF Delaytime | Sf | 1D=0.2A, Ag = 600 [uf rattime [_Vsb_ | Diode Forward Voltage Drop [| 12 [20 fv | ISO=TAVGs=0 Noto 1: AIDS porartee 100% osed at 25°C ures ewan sate. (Puss eat 30036 plo, 2% ety Gra) Noto2: AAC. praetor sorpie std Switching Waveforms and Test Circuit Yoo 90% . AL 10%. wer -----+ OFF) T Fouse 1

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“SUPERTEX INC on def srzae9s coolbbb 5 T Typical Performance Curves ware yp T-3S-25 . Output Characteristics Saturation Characteristics os Fy TT cst 1 | i ns oe LLL eee BE Lt grr | gg go LAT > Loo Aw fee > Oo AW i 2 og Yoitir it tt g LIA i tt 2 = PFT e/a 2D Zn * Jaa VA - 4SRReeeee ofFL TTT Et Tt ft | j ° Vos (voLre . ° vos ours) ° Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature voce TTT cst] ee | PERE 3 we EEE 2 wert | a a . V4 150°C H WIC er [NE = wolf | tt tty tt s a7 | NI TT g Wht ® ee ee OF PERE EE BPRS | 2 a aS 0 On 0.2 03 04 O58 oO 2 60 75 «100 125 160 1p (AMPERES) Te fc} : Maximum Rated Safe Operating Area Thermal Response Characteristics | ae 2 ‘fT. . TA * ee a | es Ea s | | | [ZI + Z a a oy Peseta NSAI IL || TT] z 4 gt SESSA SH 2 |

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oot Li | NIN ee a a ESS Se Eee = 4 Hert : & [Z| tena [| ool _L LIT | ey eves] | Ill - ,f | [} 1 10 100 1000, 1 10 100 1000 = 10,000 Vos (VOLTS) tp (SECONDS) | 8-97

SUPERTEX INC __ 01 pePazzaess ooo. 7 VN13C : 7-35-25 BVDSS Variation with ‘Temperature aso ON- Resistance Vs .Drain Current “ETPLELT CoOL FEE He 3“ Z\\ - } BY ERA § COOP i He 8 COO z s 8 [_| @ Ooo ee ee on & LC an a COG DP CAE © COC Bec eree » Heber 0.95 ICL | peer wee “ ° x « i (AMPERES) tac) Ips Transfer Characteristics ‘Vith) and Pe" 04 a . s , HA] » Et ce ry 2 _~ 7 i i Pho P Goeooya PJ PSSzcr.. §@ Peery 2 COPS" @ CLO eo. COLAC , 1 “EEE TEPER , Qo . Tre. | oF es avouts nee ’ teristics Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristi “ CCLELIT LL [| * AEs oe ae ee A AE Fa 2 IN D+ Cooper ein EEE Ke) | Re 1 03 04 Os se vows oo maNocoUL OMS) * 8-98