VN1306 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage – 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. S G DD G S TO-39 TO-92

Ordering Information

Case: DRAIN

90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BV DSS VN1310 100 VN1306 60 V V GS = 0V, ID = 1mA VN1304 40 VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS , ID = 1mA DVGS(th) Change in VGS(th) with Temperature -3.9 -5.0 mV/ °CV GS = VDS , ID = 1mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 mAV GS = 0V, VDS = Max Rating 100 mAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.25 0.6 V GS = 5V, VDS = 25V 0.50 1.4 V GS = 10V, VDS = 25V R DS(ON) 5.0 15 V GS = 5V, ID = 50mA 5.0 8.0 V GS = 10V, ID = 500mA DR DS(ON) Change in RDS(ON) with Temperature 0.8 2 %/ °CV GS = 10V, ID = 500mA G FS Forward Transconductance 120 m V DS = 25V, ID = 500mA C ISS Input Capacitance 27 35 C OSS Common Source Output Capacitance 13 15 pF C RSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 2 5 tr Rise Time 2 5 td(OFF) Turn-OFF Delay Time 2 6 tf Fall Time 2 5 VSD Diode Forward Voltage Drop 1.0 1.3 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 350 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Drain-to-Source Breakdown Voltage W Static Drain-to-Source ON-State Resistance A VDD = 25V ID = 500mA R GEN = 25W ns VGS = 0V, VDS = 25V f = 1 MHz Switching Waveforms and Test Circuit VN1304/VN1306/VN1310 W

1.6 1.2 0.8 VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics 1.6 1.2 0.8 0.4 VDS (volts) Maximum Rated Safe Operating Area 0.1 100 101.0 0.1 1.0 .01 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.4 0.3 0.2 0.1 G FS (siemens) ID (amperes) Power Dissipation vs. Ambient Temperature 0 150 10050 2.5 2.0 1.5 1.0 0.5 1257525 TA (°C) PD (watts) TO-92 TA = -55°C TA = 25°C TA = 25°C TA = 125°C VDS = 25V 01 0 2 0 3 0 5 0 40 VGS = 10V 0246 1 0 8 VGS = 10V 2.0 TO-39 2.0 0.5 0.4 TO-92 (pulsed) TO-92 (DC) TO-39 (DC) TO-39 (pulsed) TO-39 PD = 3.5W TC = 25°C TO-92 P D = 1W TC = 25°C Typical Performance Curves VN1304/VN1306/VN1310

Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) R DS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 1 02 03 04 0 02468 1 0 1.5 1.2 0.9 0.6 0.3 -50 0 50 100 150 1.1 1.0 0.9 1.25 1.0 2.0 1.6 1.2 0.8 0.4 04 81 2 16 20 -50 0 50 100 150 25 pF VDS = 40V VDS = 10V VGS = 5V VGS = 10V TA = -55°C VDS = 25V 25°C 125°C f = 1MHz C ISS C OSS C RSS 60 pF 0.75 V(th) @ 1mA R DS(ON) @ 10V, 500mA R DS(ON) @ 5V, 50mA 0 0 0 0 Typical Performance Curves