VN12C SUTEX | Alldatasheet

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EX INC Ol pe ffa773295 ooo1bsy 4 @ Supertex inc. 39 -/ ® N-Channel Enhancement-Mode Vertical DMOS Power FETs . i | Ordering Information i I BVo59/ oso ‘Order Number / Package j BVoas (max) To-220 | dice | | i viiatene | [ov [te | won| vmszzons | vnvtzzone | vnszzons | vnrzzon | { Features Advanced DMOS Technology | Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- i . ize a vertical DMOS structure and Supertex's well-proven silicon- D Low power drive requirement gate manufacturing process. This combination produces devices D Ease of paralleling with the power handling capabilities of bipolar transistors and with P the high input impedance and negative temperature coefficient GF Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, Excellent thermal stability these devices are free from thermal runaway and thermally- { 1 Integral Source-Drain diode induced secondary breakdown. i a a 7 ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide 1 High input impedance and high gain range of switching and amplifying applications where high break- : © Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and ! fast switching speeds are desired. a i . i Applications Package Options (Note 1) : © Motor contro! i © Converters i © Amplifiers a i O Switches es, | © Power supply circuits l i © Drivers (Relays, Hammers, Solenoids, Lamps, Tos | Memories, Displays, Bipolar Transistors, etc.) SOR il mi Absolute Maximum Ratings i | Drain-to-Source Voltage BVy¢5 0-39 0-220 Drain-to-Gate Voltage BV pos Gate-to-Source Voltage +20V . Operating and Storage Temperature 55°C to +150°C Soldering Teper” 00 Nate See Package Outino secon or dcrte lout “Distance of 18 mm tom cave 10 eacorde 8-85

)SUPERTEX INC OL ra | 8773295 OOOMLSS O | VNI2C Thermal Characteristics . TH39-7 . T,, (continuous) Power Dissipation 6, tonw @T, = 25°C “Cw . [ros TOA OA ow 80s ea aa ; [roso [soa Toa | asw as | “sa | i ee i ‘ip Cantos) tits by max ated, j Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) | [_Svmbor [Parameter |Win [Typ [Max [Unit Conaitions BY, Drain-to-Source r= [eam Gamepad | fv [one | Ves | Gate Threshold Voltage TV Veg Vis: = toma : | AVose [Chane iF Vas with Temperature || [a7 [45 | mvre | Vos= Vos to= TomA | less | Gate Bocyteakage TT 00 [AT Veg F20V.Vog=0 |_ 100 [HA [Vos = 0: Vog = Max Rating | ! Zero Gate Voltage Drain Current Vos = 0, Vog = 0.8 Max Rating i T,= 125°C ON-State Drain Current [ 4] 8 A [8] | Fos | Static Drain-to-Source [ or | 48 | ON Sine Restanes Pe | Reson | Change in Rose with Temperature || TOT WC | Veg= TV = 8A | | Gre | Forward Transconductancs "| 20 | 32 [| Veg. 8A | | Sos | Taput Capacitance | 880 | 660 | _ —— ‘Ouiput Capacitance 780 F Vos = 0, Vog = 25V | Coss | Common Source Output Capacitance || 180 [250] pI 125 Miz | Cass | “Reverse Transfer Capacitance [| 12 | 20 | | tuo | Tum-ON Delay Time Te 0] Vop = 25V [& | Risetime ied Lg TF asa Bees az} R, = 500 [a | Falting | | Veo | Diode ForwardVotage Drop | |S [25 [VT Vege Olgg=2A | Lt. ___| Reverse Recovery Time TT B00 Ts T Ves=Olo=tA | Note 17 AID. parameters 100% tested at 25°C lass citerise slated (Pls Test 000; pls, 2 Gay Ge) Note2: ABAG. parameters campleesed. Switching Waveforms and Test Circuit Yoo 20% aL 10%. ose teow Pal | GeheRATOR | core i 1 pus. [won| acre, «| | H i output ' ' son 0% 0% | ; 1 = cord ov ee id + 8-86

SUPERTEX INC o1 pe Barzaeas OOOLbSE 2 t Typical Performance Curves wee T-39-/2 Output Characteristics Saturation Characteristics fT TTT tty yy [TT a A » penne 2 2: ,L| Been 2 , Li 4Z-

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| es Ati Transconductance Vs. Drain Current Power Dissipation Vs, Case Temperature ° A “PERT TTT] ‘ eee ol | [| Tt LOCC ne NTE lg 2 , (pee oN a —— s g ° We Ble NE .. Se i Ty e° HS e *T SENT ) aoe oe ee Poe poo} PSS , Oo or ee aN Ip (AMPERES) Te Pcl Maximum Rated Safe Operating Area Thermal Response Characteristics eo rey s Tom | 7 oc ae FA : 79230. Ml tL go fT tu Fa — i § Foot Pe Ht g [Ta 7 Ff | F He . i = ath ics Hl 5 24 Iros I A [| 2 10 LY i| Sep Ff Tesrrc! 44 Sane ONE = 10-00 7 K 4 10 100 1000 001 01 a 1 10 8-87

SUPERTEX INC “on ~ pe azzaeqs 00015? 4 if VN12C 7-39-/3 BVDsSs Variation with Temperature ON-Resistance Vs, Drain Current a COOOL i a we TT e FEEPrr reo . te | ee g COCO CI i = é CEL s COLL eT @ “Tr 8 Cee eee @ . oOo ri ttt rll 8 [TT Vi7 Try : P FEEEEEGR) “BREE

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Tse) lps (AMPERES) ; Transfer Characteristics ‘V(th) and RDS Variation with Temperature ; Pee] |] [TA [TTT TTA... elt reed " EET int a | LT eee go ouNe tte Tg i g el Ltt yea 5 I j ; € COP ose] g de Tt ot : P CoCo ed 2 “TPP OAW Te 2 PZT NEL, & JOA ee COCALO Jp a a ~OLIA LETT a Vos (VOLTS) Tuc) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics TTT | ye COE Ze v= ‘COP OAT e [KE 1 2 LE AC a § SOOO TT § FJ COOA~CCe | 8 ‘ieee oe HHH coss [ose | MK on Jere Vos (VOLTS) Qg (INANOCOULOMBS) 8-88