VN1206D SUTEX | Alldatasheet
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SUPERTEX INC oy de faz7zeas ooowss & VN1206 @ Supertex inc. VN1210 T- 3F~oOF ® N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BV 55 Foscon foo ‘Order Number / Package . BVoos (max) (min) 70-39 [too | 0-220 a wwiz06o Features Advanced DMOS Technology ' (CO Freedom from secondary breakdown, ‘These enhancement-made (normally-off) power transistors util- , ize avertical DMOS structure and Supertex's well-proven silicon- © Low power drive requirement gate manufacturing process. This combination praduces devices Ease of paralleling with the power handling capabilities of bipolar transistors and with jtchit the high input impedance and negative temperature coefficient © Low Cgg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, O Excellent thermal stability these devices are free from thermal runaway and thermally- C3 Integral Source-Drain diode induced secondary breakdown, ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide i High input impedance and high gain range of switching and amplifying applications where high break- G_ Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) © Motor control O Converters OC Amplifiers
0 Switches
© Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) 70.39 0.92 LOR Cy Absolute Maximum Ratings W Drain-to-Source Voltage BVoss | Drain-to-Gate Voltage BV oss To-220 Gate-to-Source Voltage +40V Operating and Storage Temperature 55°C to +150°C Soldering Temperature” 300°C Note 1: See Package Outtne section for discrete pinouts. “Distance of 1.6 mm from case for 10 seconds. 8-89
a SUPERTEX INC OL DEffa773e7s ooowss 6 VN1206/VN1210 Thermal Characteristics : T+ 37-05 ye LA : [rose fora son cas oT i | tose [ora Tose ew oes as | | [__ tomo [tsa Tone ccs | \\ * inuou) sed by max aed : Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) ee Drain-o-Source . a Ee [vas [ste restos voroge | oe || 20 Vv [vos=Vosio=ima | [iss [eto Boay tetage TT 0 | mk [vos ==t5vvos=0 | Zero Gale Votage Drain Current |] wA | Vas = 0. Vpg = 120V Ta = 125°C [town owstate oraincurent to PTA [ves = ov, vos = 2vosion | Ros(on) _| Slate Drainto-Source a onsSiae Reesanee [wrens [| [we] [| ef Tio= ssn ves= tov | [ors [Forward Transeonducirce | ooo | [| mu [vos 2¥osionn io = 088 | [oss [input capectance TL ta | |ooss___[ commen Source Oupu Capactance [|| 0] pF | Vas ~ 0, og = 28v [onss [Reverso Tarstr Capectarce ||| a | f= she [uo tum ting 8 | Voo = €0¥, Ip = 011A [worry tunoretime Toe Rg = son Vso Diode Foward Votage Orop — [wrero | [12 [Tv [igo = tea ves=0 | feos [ [2 [|v Pao=-zanvos-0 | Note 1 AND. paramotre 100% ested a 25°C unless treo dated. Pulse es 3001 pase, 2% uy eye) Note 2 AAG. paar carl teste. Switching Waveforms and Test Circuit voo 90% ! af VN , 10%. t ‘ ieur f ‘\\ a F gions je | {s(OFFI, af pur. i ae | rs i OUTPUT ' Fa 20% foox I = I i | 8-90 |