VN12A SUTEX | Alldatasheet
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. VN12A @ Supertex inc. Tr 37-03 ® N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information ; BVog5/ Boscom Son ‘Order Number / Package BVoos (max) {min [tos [tose | to20 | Dice | ee ee ee [toon foam mn | varztonr | varztone |_vsztons Features Advanced DMOS Technology (Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- 0 bo ari jirement ize a vertical DMOS structure and Supertex's well-proven ‘silicon- w power drive requirement gate manufacturing process. This combination produces devices CO Ease of paralleling with the power handling. capabilities of bipolar transistors and with . chi the high input impedance and negative temperature coefficient Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, a © Excellent thermal stability these devices are free from thermal runaway and thermally- (Integral Source-Drain diode induced secondary breakdown. ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide C1 High input impedance and high gain range of switching and amplifying applications where high break- (Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) © Motor control © Converters <>
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O Switches Tr Ss . © Power supply circuits 103 CO Drivers (Relays, Hammers, Solenoids, Lamps, . Memories, Displays, Bipolar Transistors, etc.) foe Tt Cy Absolute Maximum Ratings | y | -t Vi, Drain-to-Source Voltage BV p55, tose so20 Drain-to-Gate Voltage BV pas Gate-to-Source Voltage +20V Operating and Storage Temperature “55°C to +150°C ‘Soldering Temperature” 300°C Note 1; See Package Outine section for discrete pinouts. ~ “Distance of 1,6 mm from case for 10 seconds. : 8-81
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Thermal Characteristics 7-39-13 T, (continuous) Power Dissipation] 0, Oe @T,=25°° | cw | “CiW ce SO Fe “Ip (continuous) is limited by max rated Ty. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) a A BVo55 | Drainto-Source | wni2io | 100 | Breakdown Voltage [wnr20s [60 | v Vg #0. = 10mA [wwre04 [40 | [ave [orange Vag wi Temperature || 48] “58 | WFO | Voge Von o=F0n | [ew | ato Bodyteakags || | 0] AY Veg #200 Vig=0 __ Zero Gate Voliage Drain Current TMA | Vag = 0, Vpg = 0.8 Max Rating Ty= 125°C on [Ves=5V.Vos=26V | ON Siate Drain Current Left | A [20 | 3 | Static Drain-to-Source | 022 | 0.45 | . ; ON-Stale Resistance [02 | 03 | [ison | Crande M Rogg wa Tomporatve [| 088 [2 [HPO | Voge TOV. TOA | [ere Foard Transcendence | 40 | 48 | [8 [Voge @ivibn2A | [Gee | trputCapactance «|S 600 | 680 Vi.2 0, V., = 28V [Coss | Common Source GuiputCapactence || 900 | 960 | 1S Mie i [Gree | Reverso TransiorGapactancs || 80 | 78 | [a Reetme | S| | | Woo = BY [tom [tumoreOeaytine 70 | | aan Ty [Fatima | “* [Vex Diede Forward VotageOrop || 12 | 14 | WV | Voge Osteo = 108 [i [Reverse Recovery Time | | 800 ns] Vag lens 1A ow 17 MID. paraetr 100% ete a 25° ulos carne Hated (Pulboost 20s pute, 2% ay cyl) Note; AIAG. parameter samp tote Switching Waveforms and Test Circuit Yoo cor me 10%. ro poise | trout Peal | geneRaton | SCOPE | 1 DUT, [wom "| ior, | i cust | \\ on 10% 10% 1 ! i > ; son) hes [oe F + > 8-82
SUPERTEX INC on ve Barz3295 ooo1se 5 | VN12A Typical Performance Curves — 7-39-43 Output Characteristics Saturation Characteristics ” 2» A ets Tse «fee ge HAT i F] A 5 Cit Ai © Co 2 , LI Aen B 7 2 HAC pe PE Peet AS ° ° 0 ry 0 ‘Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature “CTT eee ° Nee TTT ~CLLEC TT oe es CETTE Tt | PINE TT 4 3 ,. Sees , we LIN Tt a
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SUPERTEX INC on ve Qarzaess ooous3 2? VN12A T-39-13 BVDSs Variation with Temperature ON - Resistance Vs. Drain Current [TTT ” rn “CEPT \\s bean g COC _ * eed » EO 2 ae i Ooo é TT ee @ {iti @ CRP rrr ee rs ee a EE a Eras> seen CEPT rrr sort Pr Ts cy Ips (AMPERES) Transfer Characteristics ‘Vith) and RDS Variation with Temperature [ose 1 TTT IZ FAA oo Zee os YT ttt feex | | a =aer4e 8 ge LOO S SSPE. - COC 2 POSE" 3 ,.COO Ao Sy CeCe, = Ao 2 “ETERS” 3 »CLEV EEC 8 J CCCCTER.. F COA FEES (OAT xoLtLtttittTy, Vs (VOLTS) Tc) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics l Saas oN /CCceee - Ne ri CPP iy a IN ao PEE a oy £ oo —— @ LUCCA x0 » CORBA Ne AT 5 — » Vem TTT Vps (VOLTS) QG (NANOCOULOMBS) 8-84