VN1206 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
Ordering Information
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VN1206 Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 120 V V GS = 0V, ID = 100µA VGS(th) Gate Threshold Voltage 0.8 2.0 V V GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ±15V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = Max Rating 500 µAV GS = 0V, VDS = Max Rating TA = 125°C ID(ON) ON-State Drain Current 1.0 A V GS = 10V, VDS = 10V RDS(ON) 10 V GS = 2.5V, ID = 0.1A 6.0 V GS = 10V, ID = 0.5A GFS Forward Transconductance 300 m V DS = 10V, ID = 0.5A CISS Input Capacitance 125 COSS Common Source Output Capacitance 50 pF CRSS Reverse Transfer Capacitance 20 tr Rise Time 8.0 td(ON) Turn-ON Delay Time 8.0 tf Fall Time 12 td(OFF) Turn-OFF Delay Time 18 VSD Diode Forward Voltage Drop 1.2 V I SD = 0.25A, VGS = 0V Notes: 2. All A.C. parameters sample tested. VGS = 0V, VDS = 25V f = 1 MHz Static Drain-to-Source ON-State Resistance ns VDD = 60V, ID = 0.4A RGEN = 25Ω Electrical Characteristics (@ 25°C unless otherwise specified) Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Package I D (continuous)* ID (pulsed) Power Dissipation θjc θja IDR * IDRM @ TC = 25°C °C/W °C/W TO-92 0.23A 2.0A 1W 125 170 0.23A 2.0A * ID (continuous) is limited by max rated Tj. Ω Ω