VN11A SUTEX | Alldatasheet

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SUPERTEX INC On dePfazzaess ooowye 2 T-39-/ . VNI1A Supertex inc. ® N-Channel Enhancement-Mode Vertical DMOS Power FETs

Ordering Information

BVoss/ Rosiony ‘Order Number / Package BVo00 (max) Toso | T0220] Dice | vwurvosns | yn toet vison vwritons | viittoND Features Advanced DMOS Technology

0 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util-

ize a vertical DMOS structure and Supertex's well-proven silicon- Low power drive requirement gate manufacturing process. This combination produces devices ! © Ease of paralleling with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient © Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of al MOS structures, © Excellent thermal stability these devices are free from thermal runaway and thermally- Integral Source-Drain diode induced secondary breakdown. ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide High input impedance and high gain range of switching and amplifying applications where high break- (O Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) © Motor contro! O Converters OD Amplifiers FOR i — OD Switches L G Power supply circuits CO Drivers (Relays, Hammers, Solenoids, Lamps, iii Memories, Displays, Bipolar Transistors, etc.)

1099 To2o

i Absolute Maximum Ratings 2s Drain-to-Source Voltage BV oss Drain-to-Gate Voltage BVoas 708 Gate-to-Source Voltage 220V Operating and Storage Temperature -55°C to +150°C. . Soldering Tamporature’ 800° Note: See Package Outi secton for crete pout | = stance of. mm om case or 10 second, 8-73

SUPERTEX INC OL DE gfs773295 OOoLbYya 4 T VNTIA Thermal Characteristics 7- 39-4 1, (continuous)* Power Dissipation 4, lon ont @T, 225° | °CW [roe | eon | aoa | ow | ar | ro | om | oo | [-to-20 [oa sf east Toa] 0A “Ip (Continuous) is limited by max rated T,. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [sm [rome [ome [mle oom BVDSS Drain-to-Source [vniiio | 100 _| Breakdown Voltage VN1106 |? | V_ | VGs=0, ID= 5mA Vestn) | Gate Threshold Voltoge «|e | | 24 | | vasevos.ip=8ma ‘AVGSIth) | Change in VGS{th) with Temperate |__| —4 | -8 | mvfc| vGs=VosIp=6mA | [tess | Gate Body Leokoge || 100 |_| Vas = 220V, Vos=0 Zero Gate Voltage Drain Current [60 | “A | VGS=0, VDS = Max Rating VGS = 0, VDS = 0.8 Max Rating Ta = 125°C . ON'State Drain Current [3 [5 | VGS = 5V, VDS = 25V | [es [15 _| VGS= 10V, VDS = 25V Static Drain-to-Souree [07 [4.0] ON-State Resistance [oa | 07 | Vas = 10V, ID=5A DRDS(ON) | Change in RDS(ON) with Temperature] ‘| 0.3 | 0.8 | %/°C | VGS=10V.ID=5A [Ges | Forward Transconductance | 1 | 2? | |__| VDS=26V.1D=3A [-Ciss | Input Capacitance ———————+| | 240 | 360 | Ves, vos = 26V [Coss | Common Source Output Capacitance ||” 180 |” 200 | Yost vos [Criss | Reverse Transfer Capacitance || 18 | 25 | ™ Turn-ON Delay Time en vob = 25v [Ce Rise Time SSC Sd 8 | en Turn-OFF Delay Time re fee 502 [ee [alltime i [v0 | Diode Forward Voltage Drop | 2 | 16 [TV | vas=0. Iso 6A [ir reverse Recovery time | | 300] | ns | Vas=0,1s= 1A Noe (ANDO. parameters 100% tested at 25°O unless otras sate. (Puls est 00re pulse, 2% duty oyclo) Nole2: AAC. parameters ean etod Switching Waveforms and Test Circuit voo | 90% | 0%. RL ‘ eur ----- OFFD Fuse 71 | | GENERATOR | SCORE outeur 10% \\ I 10% l | son 90%) 90% i 4 I Li] * * i 8-74 i i

' SUPERTEX INC Ol DE Pazzaess DOOMYY &b T Typical Performance Curves vita 7-3 9-4 Output Characteristics Saturation Characteristics °C Tier “TTTTT TT TIT) . 6 SyASeeeees vw LTTE TT sey") : ~~ L | | ees i fe 4a g vf ee : fd a £ |i} | ger) | Eg g LL fees 2 ! See 8 | | Ao | ‘ to 4 By anne | | AE) ; 4 Art fPrr rt) oO 10 20 30 40 60 oO 2 4 6 8 10 Vos (VOLTS) Vos (VOLTS) | Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature | Topi TT Tate LT a ; wolfe ee loot | Ji | WT tT iscte |_| ee u 3 4] AH a Nee ee i ee Ee feNeee s , ffi | Tt Trt yt E ss i | § | Paes . [| SWINE TI i } oft tty ttt tt Ne ( Poe Lrowl | | FS | | oLLTTT TTT tt (Co ES ! ° 4 8 12 16 20 0 2% 60 7 100 126 150 } 1p (AMPERES) Te fc) | Maximum Rated Safe Operating Area Thermal Response Characteristics

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SUPERTEX INC o1 pe az7aaas OOO1b4S 4 T ‘ VNITA T-39- BVDSs Variation with Temperature ‘ON - Resistance Vs. Drain Current “ASE ERE 7 115 2.0 VGs = 5V rr ee A . SOteereee Dpaeecaccnieee meses ieceset € Z| = ee es ee PIERS? Te 085 os —— COA Eero owL ELE ET (CTT ° ° nie) . “ Ips (AMPERES) Transfer Characteristics Vth) and RDS Variation with Temperature [Fota’ [TTT TT [TT TTT | eA LETT TT LEE), Pty | Tee) eg LEE T [pao a wf Loo hae’ fowl PAS e “COCA PRET" & AL = — = Pee ae 2 Seer.

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dees) cores SSeS = Z LEAT TT ol LOTT T TT, 6 8 10 60 o ° > ves (VOLTS) Ty Cc) H Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics “ “CTT TTT Tr ako EET rr xf He e AI [| » sooo es Ne g ‘CO ae |

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