VN11C SUTEX | Alldatasheet
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SUPERTEX INC rr ays | on ve sr7ae95 ooo, o § o VN11C Super tex imc. T-39- i t i ® N-Channel Enhancement-Mode 4 Vertical DMOS Power FETs i Ordering Information f BVos5/ ‘Order Number / Package g BV pas [03 [toss | To20 [pice | H eee ee i [enya Leak zon [rane [wean | vrrzoun i . kl Features Advanced DMOS Technology A (Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- Z i ize a vertical DMOS structure and Supertex's well-proven silicon- f G_ Low power drive requirement gate manufacturing process. This: combination produces devices by (Ease of paralleling with the power handling capabilities of bipolar transistors and with i ds the high input impedance and negative temperature coefficient Low Cigg and fast switching speeds Peg MEMOS devices, Characteristic of al MOS structures, "YM © Excellent thermal stability these devices are free from thermal runaway and thermally- Gi Integral Source-Drain diode induced secondary breakdown. A ah input ts - Supertex Vertical DMOS Power FETs are ideally suited to a wide a
0 High input impedance and high gain range of switching and amplifying applications where high break- i
Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and 4 | fast switching speeds are desired. | Applications Package Options (Note 1) © Motor control H © Converters iy : O Amplifiers w i { O Switches SS 4 : 1 Power supply circuits LT © Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) } \\ To39 To-220 | , Absolute Maximum Ratings S Drain-to-Source Voltage BV ps5 \\S=25 rain-to-Gate Voltage BVags, 08 Gate-to-Source Voltage +20V . Operating and Storage Temperature -55°C to +150°C : Soldering Temperature" 300°C Note 1: See Package Outine section for discrete pinouts i Soldering Temperature’ SOON “Distance of 1.6 mm from case for 10 seconds. . 8-77 7 i
© SUPERTEX INC a1 pe Barzae3s oooubY? 1 | VN11C Thermal Characteristics T-39-- 1, (continuous)* Power Dissipation 4. Toma! @T, = 25°C CW [ros aaa tow To es TA 45a | [ross | tA Ts Taw Ts | ta sa | towo [ea Ts asw te |e | ewk sa | “Ip (continuous) i limited by max rated T, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [[symbor [Parameter [min | typ | Max | unt | Conditions | BVess__| Drain-to-Source [vnisie [160 | Vi] Vos = 0. ip = 5mA Breakdown Voltage | -vniiz0 | 200 | Gate Threshold Voltage Pott 8 TV Vas = Vos: to = Sma Ghange in Vsoy with Temperature [S88 mvc | Vos=Vos:lo= Sma | | loss __|_ Gate Body Leakage [|| t00 [aA] Vos = #20V, Vos = 0 [50 | WA | Vag=0, Vg = Max Rating Zero Gate Voltage Drain Current mA Vag © 0; Vpg = 0.8 Max Rating Ty = 125°C ON-State Drain Current [+] 8 | A [2[ 25] Vas = 10V, Vg = 25V Rroog | Sale Daino Source [as | AS | Change in Rociox) With Temperature fF | o8 | a [mre | Vas= 10V.15= 1A [S| Forward Transconduciance | 0B | oa | | S| Vogn®8Vibo0aA | Input Capaciiance || 300 |" 360 | Vos = 0; Vos = 25V . Reverse Transfer Capacitance [| 20 | 30 | | Tun-ON Delay Time [| || Rise Time a Naar r ‘= : [| Fattime Diode Forward Voltage Drop [oz | 0 [VT Ves =01tgy = t00mA Lt, | Reverse Recovery Time | 1 j Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300ps pulse, 2% duty cycle.) | fo AIAG. poometee ample Switching Waveforms and Test Circuit Yoo 90% re input 10%. VO puse lngut on | GeheRATOR | SCORE | 1 our. [som ute | i soa : 10% 10% H ' 1 > ; oon ho (oS t ' | 8-78
- SUPERTEX INC O1 pe az7ae%s ooo1b4a 3 f VN1IC ical Performance Curves Te T3914) Output Characteristics Saturation Characteristics “CTTTTTT TTT * Ae AAA SCP) CO Vz i @ |CCToe 3 HA YAR | : HAA eae Seennee \\/aueeeeeee ACCCeceee Wat rt f _ ASR EH a} ‘Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature [TT TT ves. [ TTT TT of tT TTT Tet PPP yy See re u = y(t ttt ttt tt | a jroo | | ft | gC | F yf oN 2 o4|- (EET TT TT 5 [iT Ny § OAT Tre] . pj | [Wy Tt ee erst oT TNT 2 heat —f > TSI ; Aes ee 1p (AMPERES) Te (ch Maximum Rated Safe Operating Area Thermal Response Characteristics ee w joembasent =H 3 a ee eases TT | Tl : eaeL—| [roams | TNS | [II j a ie 3 (SESE SSA 2 | 7 | 7 g Kf 3 n/a : FR ET eae e aL LU NUT g [fi | 7 es ee EPO Bec FT SH i [pace oor HH eH | ee en 8-79 eee Ls La
SUPERTEX INC o1 ve Bsz73e5s goo01b49 5 it VNC T-3?-1/ BVDSS Variation with Temperature ON-Resistance Vs. Drain Source Current * CCT “AAA a /COCCATE @ * CEPT . “CoReatt rrr | § eee COC i“ CPT ype 8 Cer yee | 8 Ober § ooo og @ Cer BC perce Ter a JEEELEE Eee Coe CCOCCeee » KOE ~=LLCA -50 oO 50 100 150 oO 1 2 3 4 5
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aanp Annee @ to Shes aap Sennen | NI | oA wd a V@s (VOLTS) Ts Cc) 1 Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics “ (=F “Cpt TTT | \\ ose CO oo Coo a | | [i] a ec/ Coe = am : OZ 7 a on/ eee : 2 Oe | «KE PA a Fett a ; iia Vos (VOLTS) ‘QG (NANOCOULOMBS) | 8-80