VN10K SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) S G D

Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source 60 V V GS = 0V, ID = 100µA Breakdown Voltage VGS(th) Gate Threshold Voltage 0.8 2.5 V V GS = VDS , ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 mV/ °CV GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = 15V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = 45V 500 µAV GS = 0V, VDS = 45V, TA 125°C ID(ON) ON-State Drain Current 0.75 A V GS = 10V, VDS = 10V RDS(ON) 7.5 Ω VGS = 5V, ID = 0.2A 5.0 Ω VGS = 10V, ID = 500mA ∆RDS(th) Change in RDS(th) with Temperature 0.7 %/ °CV GS = 10V, ID = 500mA, GFS Forward Transconductance 100 m V DS = 10V, ID = 500mA CISS Input Capacitance 48 60 COSS Common Source Output Capacitance 16 25 pF CRSS Reverse Transfer Capacitance 2 5 t(ON) Turn-ON Time 10 t(OFF) Turn-OFF Time 10 VSD Diode Forward Voltage Drop 0.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 160 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. VN10K Package I D (continuous)1,2 ID (pulsed) Power Dissipation θjc θja IDR IDRM @ TC = 25°C °C/W °C/W Notes: 1. I D (continuous) is limited by max rated Tj. 2. VN0106N3 can be used if an I D (continuous) of 0.5 is needed. Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) VDS = 25V, VGS = 0V f = 1 MHz VDD = 15V, ID = 0.6A, RGEN = 25Ωns Static Drain-to-Source ON-State Resistance Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Ω

Typical Performance Curves Output Characteristics 1.0 0.8 0.6 0.4 0.2 VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics 1.0 0.8 0.6 0.4 0.2 VDS (volts) Maximum Rated Safe Operating Area 1 100010010 0.1 1.0 0.01 VDS (volts) ID (amperes) Switching Waveform Input Voltage (volts) 05 0 10 20 30 t – Time(ns) Transconductance vs. Drain Current 250 200 150 100 0 1000200 400 600 800 GFS (m ) ID (mA) Power Dissipation vs. Case Temperature 0 15010050 1257525 TC (°C) PD (watts) TO-92 VDS = 10V 300µs, 2% Duty Cycle Pulse Test TO-92 (DC) 01 0 2 0 3 0 5 0 40 VGS =10V 0246 1 0 8 VGS =10V Ω Output Voltage (volts) 0 0 TC = 25°C

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VN10K Typical Performance Curves Transconductance vs Gate-Source Voltage Gfs (m ) ID (amperes) GFS (mhos) Output Conductance vs Drain Current On-Resistance vs. Gate-to-Source Voltage RDS(ON) (ohms) BVDSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage C (picofarads) VDS (volts) VGS (Volts) BVDSS Variation with Temperature 01 0 2 0 3 0 4 0 02468 1 0 -50 0 50 100 150 1.1 1.0 0.9 100 1 10010 02468 1 0 1.0 0.8 0.6 0.4 0.2 250 200 150 100 Ω VGS (volts) 1.0 0.1 0.01 0.01 0.1 1.0 VDS = 0.1V REDUCTION DUE TO HEATING VDS = 10V 300µs, 2% DUTY CYCLE PULSE TEST VDS = 25V 80µs, 1% DUTY CYCLE PULSE TEST V DS = 10V 3000µs, 2% DUTY CYCLE PULSE TEST CISS COSS CRSS