VN0635 SUTEX | Alldatasheet

Document overview

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Technical content

Features

nn Free from secondary breakdown nn Low power drive requirement nn Ease of paralleling nn Low CISS and fast switching speeds nn Excellent thermal stability nn Integral Source-Drain diode nn High input impedance and high gain nn Complementary N- and P-channel devices

Applications

nn Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) TO-92

Ordering Information

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 0.25A 1.5A 1W 125 170 0.25A 1.5A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BV DSS VN0640 400 VN0635 350 V GS(th) Gate Threshold Voltage 1.0 4.0 V V GS = VDS , ID = 2mA ΔVGS(th) Change in VGS(th) with Temperature -4.0 mV/ °CV GS = VDS , ID = 2mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.6 V GS = 5V, VDS = 25V

0.75 V GS = 10V, VDS = 25V

R DS(ON) 8.0 V GS = 5V, ID = 100mA 8.0 10 V GS = 10V, ID = 500mA ΔR DS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = 10V, ID = 500mA G FS Forward Transconductance 100 160 m V DS = 25V, ID = 500mA C ISS Input Capacitance 105 130 C OSS Common Source Output Capacitance 25 75 pF C RSS Reverse Transfer Capacitance 10 20 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 10 VSD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. A VV GS = 0V, ID = 2mA VGS = 0V, VDS = 25V f = 1 MHz Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VDD = 25V, ID = 0.5A, R GEN = 25Ω ns Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Ω Ω

Typical Performance Curves Output Characteristics 1.25 1.0 0.75 0.5 0.25 01 0 2 0 3 0 5 0 40 VDS (volts) ID (amperes) Saturation Characteristics 0.75 0.6 0.45 0.3 0.15 VDS (volts) ID (amperes) Maximum Rated Safe Operating Area 0.1 1.0 0.01 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.40 0.32 0.24 0.16 0.08 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 125 7525 TC (°C) PD (watts) TC = 25°C 100101 1000 0.80.60.40.20 VDS = 25V TA = -55°C TA = 25°C TA = 150°C TO-92 0246 1 0 8 VGS = 10V 0 0 1.0 TO-92 (DC) VGS = 10V TO-92 P D = 1W TC = 25°C

Typical Performance Curves Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) DS(ON)R (normalized) V DS(th)and R Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 1 02 03 04 0 150 100 02468 1 0 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 0.9 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 100 pF VDS = 40V VDS = 10V 180 pF R DS @ 10V, 0.5A VGS = 5V TA = -55°C VDS = 25V f = 1MHz C ISS C OSS C RSS 25°C 150°C V(th) @ 2mA 200 VGS = 10V 2.5 2.0 1.5 1.0 0.5