VN0545 SUTEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

nn Free from secondary breakdown nn Low power drive requirement nn Ease of paralleling nn Low CISS and fast switching speeds nn Excellent thermal stability nn Integral Source-Drain diode nn High input impedance and high gain nn Complementary N- and P-channel devices

Applications

nn Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage – 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Ordering Information

Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 50mA 250mA 1.0W 125 170 50mA 250mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Symbol Parameter Min Typ Max Unit Conditions BV DSS VN0550 500 VN0545 450 V GS(th) Gate Threshold Voltage 2 4 V V GS = VDS , ID = 1mA DVGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/ °CV GS = VDS , ID = 1mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 mAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 100 V GS = 5V, VDS = 25V 150 350 V GS = 10V, VDS = 25V R DS(ON) 45 V GS = 5V, ID = 50mA 40 60 V GS = 10V, ID = 50mA DR DS(ON) Change in RDS(ON) with Temperature 1 1.7 %/ °CV GS = 10V, ID = 50mA G FS Forward Transconductance 50 100 m V DS = 25V, ID = 50mA C ISS Input Capacitance 45 55 C OSS Common Source Output Capacitance 8 10 pF C RSS Reverse Transfer Capacitance 2 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 10 tf Fall Time 10 VSD Diode Forward Voltage Drop 0.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance mA VV GS = 0V, ID = 1mA VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V, ID = 150mA, R GEN = 25W ns W W

Typical Performance Curves Output Characteristics 0.5 0.4 0.3 0.2 0.1 VDS (volts) ID (amperes) Saturation Characteristics 0.25 0.20 0.15 0.10 0.05 VDS (volts) ID (amperes) Maximum Rated Safe Operating Area 1 1000 10010 0.01 0.1 1.0 0.001 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.40 0.32 0.24 0.16 0.08 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 1257525 TC (°C) PD (watts) TO-92 PD = 1W TC = 25°C TO-92 TA = -55°C TA = 25°C TA = 125°C VDS = 25V 01 0 2 0 3 0 5 0 40 VGS = 10V 0246 1 0 8 VGS = 10V TO-92 (DC) TC = 25°C

Typical Performance Curves C OSS Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) V DS(th)and R Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 1 02 03 04 0 02468 1 0 0.5 0.4 0.3 0.2 0.1 -50 0 50 100 150 1.1 1.0 0.9 100 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 50 pF VDS = 40V VDS = 10V 105 pF V(th) @ 1mA VGS = 5V VGS = 10V T = -55A C° VDS = 25V C ISS C RSS 25°C 150°C R DS(ON) @ 10V, 50mA f = 1MHz 112 pF 1.8 1.4 1.0 0.6 0.2 R DS(ON) (normalized)