VN0550 SUTEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Ordering Information

Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 78mA 250mA 1.0W 125 170 78mA 250mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS VN0550 500 V V GS = 0V, ID = 1mA VGS(th) Gate Threshold Voltage 2 4 V V GS = VDS , ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/ °CV GS = VDS , ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1m A V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 100 V GS = 5V, VDS = 25V 150 350 V GS = 10V, VDS = 25V RDS(ON) 45 V GS = 5V, ID = 50mA 40 60 V GS = 10V, ID = 50mA ∆RDS(ON) Change in RDS(ON) with Temperature 1 1.7 %/ °CV GS = 10V, ID = 50mA GFS Forward Transconductance 50 100 m V DS = 25V, ID = 50mA CISS Input Capacitance 45 55 COSS Common Source Output Capacitance 8 10 pF CRSS Reverse Transfer Capacitance 2 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 10 tf Fall Time 10 VSD Diode Forward Voltage Drop 0.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance mA VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V, ID = 150mA, RGEN = 25Ω ns Ω Ω

Typical Performance Curves /K4F/K75/K74/K70/K75/K74 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K30/K2E/K35 /K30/K2E/K34 /K30/K2E/K33 /K30/K2E/K32 /K30/K2E/K31 /K30 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K53/K61/K74/K75/K72/K61/K74/K69/K6F/K6E /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K30/K2E/K32/K35 /K30/K2E/K32/K30 /K30/K2E/K31/K35 /K30/K2E/K31/K30 /K30/K2E/K30/K35 /K30 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K4D/K61/K78/K69/K6D/K75/K6D /K52/K61/K74/K65/K64 /K53/K61/K66/K65 /K4F/K70/K65/K72/K61/K74/K69/K6E/K67 /K41/K72/K65/K61 /K31 /K31/K30/K30/K30/K31/K30/K30/K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31/K2E/K30 /K30/K2E/K30/K30/K31 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K70/K6F/K6E/K73/K65 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K69/K73/K74/K61/K6E/K63/K65 /K28/K6E/K6F/K72/K6D/K61/K6C/K69/K7A/K65/K64/K29 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30/K2E/K30/K30/K31 /K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31 /K74 /K70 /K28/K73/K65/K63/K6F/K6E/K64/K73/K29 /K54/K72/K61/K6E/K73/K63/K6F/K6E/K64/K75/K63/K74/K61/K6E/K63/K65 /K76/K73/K2E /K44/K72/K61/K69/K6E /K43/K75/K72/K72/K65/K6E/K74 /K30/K2E/K34/K30 /K30/K2E/K33/K32 /K30/K2E/K32/K34 /K30/K2E/K31/K36 /K30/K2E/K30/K38 /K30 /K30 /K30/K2E/K35/K30/K2E/K31 /K30/K2E/K32 /K30/K2E/K33 /K30/K2E/K34 /K47 /K46/K53 /K28/K73/K69/K65/K6D/K65/K6E/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K50/K6F/K77/K65/K72 /K44/K69/K73/K73/K69/K70/K61/K74/K69/K6F/K6E /K76/K73/K2E /K43/K61/K73/K65 /K54/K65/K6D/K70/K65/K72/K61/K74/K75/K72/K65 /K30 /K31/K35/K30/K31/K30/K30/K35/K30 /K32/K2E/K30 /K31/K32/K35/K37/K35/K32/K35 /K54 /K43 /K28 °/K43/K29 /K50 /K44 /K28/K77/K61/K74/K74/K73/K29 /K54/K4F/K2D/K39/K32 /K50 /K44 /K3D/K31 /K57 /K54 /K43 /K3D/K32 /K35 °/K43 /K54/K4F/K2D/K39/K32 /K54 /K41 /K3D /K2D/K35/K35 °/K43 /K54 /K41 /K3D/K32 /K35 °/K43 /K54 /K41 /K3D /K31/K32/K35 °/K43 /K56 /K44/K53 /K3D /K32/K35/K56 /K30/K31 /K30 /K32 /K30 /K33 /K30 /K35 /K30 /K34/K30 /K56 /K47/K53 /K3D /K31/K30/K56 /K38/K56 /K36/K56 /K34/K56 /K30/K32 /K34 /K36 /K31 /K30 /K38 /K56 /K47/K53 /K3D /K31/K30/K56 /K36/K56 /K38/K56 /K34/K56 /K30 /K54/K4F/K2D/K39/K32 /K28/K44/K43/K29 /K54 /K43 /K3D/K32 /K35 °/K43 /K31/K2E/K30 /K30

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VN0550 Typical Performance Curves COSS Gate Drive Dynamic Characteristics QG (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) V DS(th) and R Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) BVDSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BVDSS Variation with Temperature 01 0 2 03 04 0 02468 1 0 0.5 0.4 0.3 0.2 0.1 -50 0 50 100 150 1.1 1.0 0.9 100 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 50 pF VDS = 40V VDS = 10V 105 pF V(th) @ 1mA VGS = 5V VGS = 10V T = -55A C° VDS = 25V CISS CRSS 25°C 150°C RDS(ON) @ 10V, 50mA f = 1MHz 112 pF 1.8 1.4 1.0 0.6 0.2 RDS(ON) (normalized)