VN0550_07 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral SOURCE-DRAIN diode High input impedance and high gain Complementary N- and P-Channel devices

Applications

Amplifi ers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex VN0550 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

Device Package BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (mA) VN0550N3 TO-92 500 60 150 VN0550N3-G Absolute Maximum Ratings Parameter Value Drain to source voltage BV DSS Drain to gate voltage BV DGS Gate to source voltage ±20V Operating and storage temperature -55°C to +150°C Soldering temperature 1 +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds. Pin Confi guration N-Channel Enhancement-Mode Vertical DMOS FETs DGS TO-92 (front view) -G indicates package is RoHS compliant (‘Green’)

Electrical Characteristics (TA = 25°C unless otherwise specifi ed) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 500 - - V V GS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 2.0 - 4.0 V V GS = VDS, ID = 1.0mA ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.0 mV/ OCV GS = VDS, ID = 1.0mA IGSS Gate body leakage current - - 100 nA V GS = ±20V, VDS = 0V IDSS Zero gate voltage drain current - - 10 µA V GS = 0V, VDS = Max Rating - - 1.0 mA VGS = 0V, VDS = 0.8 Max Rating, TA = 125OC ID(ON) ON-state drain current - 100 - mA VGS = 5.0V, VDS = 25V 150 350 - V GS = 10V, VDS = 25V RDS(ON) Static drain-to-source ON-state resistance -4 5 - Ω VGS = 5.0V, ID = 50mA -4 0 6 0 V GS = 10V, ID = 50mA ΔRDS(ON) Change in RDS(ON) with temperature - 1.0 1.7 %/ OCV GS = 10V, ID = 50mA GFS Forward transconductance 50 100 - mmho V DS = 25V, ID = 50mA CISS Input capacitance - 45 55 pF VGS = 0V, VDS = 25V, f = 1.0MHzCOSS Common source output capacitance - 8.0 10 CRSS Reverse transfer capacitance - 2.0 5.0 td(ON) Turn-ON time - - 10 ns VDD = 25V, ID = 150mA, RGEN = 25Ω tr Rise time - - 15 td(OFF) Turn-OFF time - - 10 tf Fall time - 10 VSD Diode forward voltage drop - 0.8 - V V GS = 0V, ISD = 500mA trr Reverse recovery time - 300 - ns V GS = 0V, ISD = 500mA Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit Thermal Characteristics Device Package ID (continuous)* (mA) ID (pulsed) (mA) Power Dissipation @TC = 25 O C (W) θJC (OC/W) θJA (OC/W) IDR (mA) IDRM (mA) VN0550 TO-92 50 250 1.0 125 170 50 250 Notes: * ID (continuous) is limited by max rated TJ. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN

Typical Performance Curves Output Characteristics 0.5 0.4 0.3 0.2 0.1 VDS (volts) ID )serepma( Saturation Characteristics 0.25 0.20 0.15 0.10 0.05 VDS (volts) ID )serepma( Maximum Rated Safe Operating Area 1 1000 10010 0.01 0.1 1.0 0.001 VDS (volts) ID )serepma( Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.40 0.32 0.24 0.16 0.08 G SF )snemeis( ID (amperes) Power Dissipation vs. Case Temperature 01 5 0 10050 1257525 TC (°C) PD )sttaw( TO-92 PD = 1W TC = 25 °C TO-92 TA = -55°C TA = 25°C TA = 125°C VDS = 25V 01 0 2 0 3 0 5 0 40 VGS = 10V 0246 1 0 8 VGS = 10V TO-92 (DC) TC = 25°C

Typical Performance Curves (cont.) COSS Gate Drive Dynamic Characteristics QG (nanocoulombs) V SG )stlov( Tj(°C) V )ht(SG )dezilamron( V DS(th) and R Variation with Temperature On-Resistance vs. Drain Current R )NO(SD )smho( VB SSD )dezilamron( Tj (°C) Transfer Characteristics VGS (volts) ID )serepma( Capacitance vs. Drain-to-Source Voltage 100 )sdarafocip( C VDS (volts) ID (amperes) BVDSS Variation with Temperature 0 1 02 03 04 0 02468 1 0 0.5 0.4 0.3 0.2 0.1 -50 0 50 100 150 1.1 1.0 0.9 100 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 50 pF VDS = 40V VDS = 10V 105 pF V(th) @ 1mA VGS = 5V VGS = 10V T = -55A C° VDS = 25V CISS CRSS 25°C 150°C RDS(ON) @ 10V, 50mA f = 1MHz 112 pF 1.8 1.4 1.0 0.6 0.2 R )NO(SD )dezilamron(

(The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) 1 2 3 Seating Plane 2 3 Front View 0.175 - 0.205 0.170 - 0.210

0.500 MIN

0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 0.125 - 0.165

0.135 MIN

0.080 - 0.105 0.014 - 0.022 Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. Doc.# DSFP-VN0550 A042607