VN0540 SUTEX | Alldatasheet

Document overview

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Technical content

Features

nn Free from secondary breakdown nn Low power drive requirement nn Ease of paralleling nn Low CISS and fast switching speeds nn Excellent thermal stability nn Integral Source-Drain diode nn High input impedance and high gain nn Complementary N- and P-channel devices

Ordering Information

Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 100mA 400mA 1.0W 125 170 100mA 400mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Symbol Parameter Min Typ Max Unit Conditions BV DSS 400 VGS(th) Gate Threshold Voltage 2 4 V V GS = VDS , ID = 1mA DVGS(th) Change in VGS(th) with Temperature -3.5 -4.5 mV/ °CV GS = VDS , ID = 1mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = Max Rating 500 mAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 300 V GS = 5V, VDS = 25V 250 340 V GS = 10V, VDS = 25V R DS(ON) 30 V GS = 5V, ID = 20mA 25 35 V GS = 10V, ID = 0.1A DR DS(ON) Change in RDS(ON) with Temperature 0.9 1.5 %/ °CV GS = 10V, ID = 0.1A G FS Forward Transconductance 100 180 m V DS = 25V, ID = 0.1A C ISS Input Capacitance 45 55 C OSS Common Source Output Capacitance 8 10 pF C RSS Reverse Transfer Capacitance 2 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 10 tf Fall Time 10 VSD Diode Forward Voltage Drop 0.8 V V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 400 ns V GS = 0V, ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance mA VV GS = 0V, ID = 1mA VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V, ID = 250mA R GEN = 25W ns W W

Typical Performance Curves Output Characteristics 0.5 0.4 0.3 0.2 0.1 VDS (volts) ID (amperes) Saturation Characteristics 0.25 0.20 0.15 0.10 0.05 VDS (volts) ID (amperes) Maximum Rated Safe Operating Area 1 1000 10010 0.01 0.1 1.0 0.001 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.25 0.2 0.15 0.1 0.05 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 1257525 TC (°C) PD (watts) TO-92 PD = 1.0W TC = 25°C TO-92 TA = -55°C TA = 125°C VDS = 25V TO-39 (DC) 01 0 2 0 3 0 5 0 40 VGS = 10V 0246 1 0 8 VGS = 10V 5V 0 0 TO-92 (DC) TC = 25°C TA = 25°C

Typical Performance Curves Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) R DS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 1 02 03 04 0 02468 1 0 0.5 0.4 0.3 0.2 0.1 -50 0 50 100 150 1.1 1.0 0.9 100 1.4 1.0 0.6 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 150 50 pF VDS = 10V 112 pF V(th) @ 1mA R DS(ON) @ 10V, 0.1A VGS = 5V VGS = 10V TA = -55°C VDS = 25V 25°C 125°C f = 1MHz C ISS C OSS C RSS 0.8 1.2 40V 0 0