VN0300D SUTEX | Alldatasheet
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» SUPERTEX INC Ol ve Pazz3eas OOOLIY 8 | T 39-07% @ Supertex inc. ® N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information i BV ps / Rosiom ‘Order Number / Package | BV eos (max) 70-39 i [sv | saa | 20a | vaoanos | vnosoon | i I Features Advanced DMOS Technology : (© Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- O Los dri t ize a vertical DMOS structure and Supertex's well-proven silicon- w power drive requirement gate manufacturing process. This combination produces devices
0 Ease of paralleling with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient Low Cig, and fast switching speeds inherent in MOS devices. Characteristic of all MOS stuctures, © Excellent thermal stability these devices are free from thermal runaway and thermally- © Integral Source-Drain diode induced secondary breakdown. i be a ‘Supertex Vertical DMOS Power FETs are ideally suited toawide © High input impedance and high gain range of switching and amplifying applications where high break-
1 Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired. Applications Package Options (Note 1) Motor control OC Converters O Amplifiers O Switches © Power supply circuits CO Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) 10-39 To.92 LOR . + Fe Absolute Maximum Ratings a Drain-to-Source Voltage BVoss } Drain-to-Gate Voltage BVoos y | Gate-to-Source Voltage +40V 0-220 Operating and Storage Temperature -55°C to +150°C Soldering Temperature” 300°C Note 1: See Package Outlne section for discrete pinouts “Datance ot 18 mmvomcaseiorioseoonds. SSS 8-45,
, SS — _ SUPERTEX INC 1 de s773295 oo01e1s o | . VNosoo Thermal Characteristics = “37-0F 4 6, Frm [ser] oom [mmo | [| [oe [wm mm es Tas | "Tp (oneaova) eked by max aed, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [—eymoo | ___Peremewr win | ww | wax | umm | conatone Drain-to-Source Jros [Seawater st ||| feveavesre | [wosmy owe wetter |» || 28] v |ves=voso=ma | figs [aw ney estamos] | 0] me vos = tov. vos 0 | us [Ves = 0v, Vg = Max Rating . Ta = 125°C : Ca me pacer | | Le eee ON-State Resistance [er [roma Toman 20 | |_| mb [vos=2¥osiom'o=08 | [coss | onmen souce OupuCopectance ||| as | Vas = 0, Vos = 18¥ [criss | Reverse ensterGapactenco ||| as | te Wie | Note 1: All D.C, parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) ‘ Note: AIAG. parameters sample teste. Switching Waveforms and Test Circuit v 20% RL 10%. inpur ----- MOFFD cr 1 | GENERATOR | score | mY I oureuT x \\ / Oe 1 \\ son 90% ‘90% { = | L--_---J * * = i 8-46 i