VN02C SUTEX | Alldatasheet

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SUPERTEX INC OL De Pparzaess 0001598 3 I . VNO2C @ Supertex inc. 7-3? -o ® N-Channel Enhancement-Mode Vertical DMOS Power FETs

Ordering Information

BVo59/ Posiow lyon ‘Order Number / Package BVocs (max) (ein) [toss | toss | roa20 | [owen | te tone | nero _| Noe16Ns [ay ta zz | vezone _|_ yrs Features Advanced DMOS Technology (C Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- A ize a vertical DMOS structure and ‘Supertex's well-proven silicon- G_Low power drive requirement gate manufacturing process. This combination produces devices Ease of paralleling with the power handling capabilities ‘of bipolar transistors and with the high input impedance and negative temperature coefficient Low Ci and fast switching speeds Teil In MOS devices. Characteristic of all MOS structures, © Excellent thermal stability these devices are free from thermal runaway and thermally- © Integral Source-Drain diode induced secondary breakdown. m ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide High input impedance and high gain range of switching and amplifying applications where high | break- (Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Notes 1 and 2) © Motor contro! OC Converters Xr:

1 Amplifiers SI

(Switches LT] © Power supply circuits y if Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) i rom T Absolute Maximum Ratings Tose Toss Drain-to-Source Voltage BV ps5 Drain-to-Gate Voltage BV pas Gate-to-Source Voltage +20V Operating and Storage Temperature -B5°C to +150°C uote 1: S00 Package Outine section or discrote pneu. Soldering Temperature” 300°C Note 2: See Array section for quad pinouts. “Dunceottemmtomesseteriosonds 8-29

SUPERTEX INC on de arzaens coowssa s Bf vNo2c Thermal Characteristics 7-39-OS Power Dissipation Ge lon Toru” @T, = 25°C “cw 70-39 [07a | Aw tes ge Tora | 28a | Troze [tsa | esa | aw | 0 | ae | mm | asa | +] (Conumuous) ie Unted by max ated T, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) Symbot | __ Parameter Min | Typ [max | unt [ Conaivons | Bogs | Drain-to-Source [_vnoats [160 | v Vag = 0, |, = 2.0mA Breakdown Voltage [_vnoz20 [200 | ‘GS J Gat Teshod Votane [erst |W] War og = 2008 Change Vara, wih Tampons [| 48 | BS | AVA | Vaq=Vogily= 10RA [Teas | Gate Boa Leshone ee A Zero Gate Voltage Drain Current [25 [ BA | Vog=0. Vig = Max Rating TA | Vag = 0, Vpg = 0.8 Max Rating T= 125°C ‘ON-State Drain Current [os | 13 | A Veg = BV, Vog = 25V [02 | Weg 10V, Veg 28 ON-State Resistance . ‘Change in Rysion9 With Temperature [| _ 08 | 14 | %PC | Vag= 10V, |p = 500mA [Bie] Foard Trascendicance 08 | or || 8 [Vege dBtiig=tA iu Gapacare ee ee Vac0.Vga50 Common Source Opa Capaciancs | [38 | 6) oF | Yvan [Cue | Ravers TaniorCapactance |_| [95 | ee en yunv [yp raitme : Diode Foard Vale Drop a Li Raver Recovery Tine seg tA . Note 1 AVD.G. parameters 100% ested at 25°C unless oherwise stated (Pulco west: 2004s pulse. 2% duy cyclo) | Note 2: AAC. parameters sample fosted Switching Waveforms and Test Circuit Voo 90% Pa 10%. reuse 7 ‘put Yon) Orr) | GENERATOR | SCOPE 1 1 DUT, ove \\ \\ son 1% 18% 1 ! \\ | + oor) oo ee + 8-30

SUPERTEX INC OL DEar73z295 OOOO 6 ‘VNO2C Typical Performance Curves 7-39-05 Output Characteristics Saturation Characteristics === CCOCL oo eA a LA dtd SES Zeceen LT gz i Seen ; CA 2 | Ao 2 we Ae = ORT ae Ansan oe PERS as A SRE RREEEE pottt ttt a oAeeerr eet FJ : ° 10 20 30 40 50 ° 2 4 6 8 10 Vos (VOLTS) Vos (VOLTS) ‘Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature ' CLC ee] rTtrtrl 4 : eLLCEL EET a ee | TTT ares | Ciel u 2 wf TL . a j

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| 8 “UARREEEEE TS es o/s elt IST FERRE EECHH = a —— 1p (AMPERES) Te Cc) Maximum Rated Safe Operating Area Thermal Response Characteristics “ES a 2 “COLO BSR | EHR ' a = I eee HIPS § COCCI & feaoy ONT 3 COCCI nei <4 8 / SENSE Sel - CUI NI Nj boa LAI & UIE INUIN Tl 2 CIC "EE So © ee ai ceed eS Z 02 oe we] | | To Como NTH BCT TI ert ee 2 SECC ico ' Vos (VOLTS) ‘tp (SECONDS) | 8-31 i Fs

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  • CaS Aa? 2S re ee 1 ° es ee ITT TTTITTT o 10 20 30 40 o 05 10 16 20 25 Vps (VOLTS) ‘Qg (NANOCOULOMBS) . 8-32