VN02A SUTEX | Alldatasheet
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SUPERTEX INC OL DEM a?732e95 0001594 b | i 8773295 SUPERTEX INC O1E 01594 _D VNO2A @ Supertex inc. T- 39-6 ® N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss/ Poarcay Order Number / Package BV o0s (max) Quad P-DIP | Quad C-DIP [av | am | 30a | vnoaoane [| vNoz0ans_| _VN0240N6 [~eov | 2a | 30a | vnoaoene | vNoz0ena | VNOZ06NS: VNo206N7 wNoavon2 | vNoatona | vNoztons [= | = Features Advanced DMOS Technology (© Freedom trom secondary breakdown These enhancement-mode (normally-off) power transistors util- rn ize a vertical DMOS structure and Supertex's well-proven silicon- (Low power drive requirement gate manufacturing process. This combination produces devices OO Ease of paralleling with the power handling capabilities of bipolar transistors and with a the high input impedance and negative temperature coefficient © Low Cig and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, TE Excellent thermal stability these devices are free from thermal runaway and thermally- : © Integral Source-Drain diode induced secondary breakdown. i ‘Supertex Vertical DMOS Power FETs are ideally ‘suited toa wide High input impedance and high gain range of switching and amplifying applications where high break- | O Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and ' fast switching speeds are desired. Applications Package Options (Notes 1 and 2) © Motor control © Converters © Amplifiers © Switches CG Power suy circuits ipply circuits tow — Drivers (Relays, Hammers, Solenoids, Lamps, roe Memories, Displays, Bipolar Transistors, etc.) rT rose L] Absolute Maximum Ratings Too Drain-to-Source Voltage BV pcs, ; Drain-to-Gate Voltage BYogs : Gate-to-Source Voltage +£20V ‘Lead DIP Operating and Storage Temperature “55°C to +150°C Nolo 1: See Package Outine section for discal pinouts. Soldering Temperature’ SSC Note 2! Seo Atay secon or gun pinouts. “Distance of 1.8 mm from case for 10 seconds. 8-25 i
SUPERTEX INC OL ve 8773295 OOO1S9S 4 i . ‘VNO2A Thermal Characteristics « 7-39-05 1, (continuous)* |, (pulsed) | Power Dissipation] 4, Ge @T =25°¢ |, CW “cw [rosa [aaa aw as as ed [tose | osafaa Tw ts | 470] oa] aa | 0-220 ET Se 7 OT Refer to Arrays and Special Functions section. “ly (continuous) is buted by max rated T, : Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) i Symbol_[ Parameter tin | Typ [| Max [_Unit_[ Conditions] i Drain-to-Source WNo204 [| «0 | i BVoss | Breakdown Voltage vnozos | 60 | Vi] Vos = 0s ty =2.5mA : | WNo2t0 | 100 | : Gate Threshold Voltage [08 [| 24 [VT Veg = Vos: lo = 25mA i Change ih Vega, with Temperature [| 38 | 48 | mvre | Va5= V5.1 =25mA Gate Body Leakage a a | i [25 | WA | Vog= 0. Vig = Max Rating : Zero Gate Voltage Drain Current Vos = 0, Vpg = 0-8 Max Rating . , Ty = 125°C . 4 ‘ON-Siate Drain Current [ 12 [ 16 | Vag = 5V, Vos = 25V j j [30 | 40 | Vos = 10V, Vp, = 25V Sialic Drain-to-Source | 18 [28] | | | ON Stato Resistance [ee Vag = 10V, by = 2A Ghange IA Roojow with Temperature [| 05 [07S | FC [Vege TOVIp=2A | | Ses | Forward Transconductance | oa [065 [| 8 | Vpg=25V. p= 2A F Input Capacitance a Vag = 0, Vp = 25V Common Source Output Capacitance | 60 | 8 | f21 MHz Reverse Transfer Capacitance j | 2 | 5 | | tuon | Tur-ON Delay Time [oy V.-28v [| Rise time 0} asa | | ‘worm, | Turn-OFF Delay Time re A, = 500 [| FallTime ee Diode Forward Voltage Drop a Es j [i [Reverse RecoveryTime TP a0 | ts | Vege Gulp té—*d ‘Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Puise test: 300us pulse, 2% duty cycle.) Note2: AAG. parameters sample tested : Switching Waveforms and Test Circuit Yoo 90% RL 1 ge 77 toot OFF | cehienaTon | ecore i t DUT. [om oueut | | soa 10% 10% i | i + sox for 1 OF = | 8-26
SUPERTEX INC 0} deBerraess coos o Typical Performance Curves 7-39-05 Output Characteristics Saturation Characteristics oo CoOoP To COC ~COCCCCe ‘ === CECT 7 fo 2 »LU Zam aw aneeeeen ; CO yee » peepee ees i CoO ae) So > “COAT == soo ay Joo ; ‘ port Ae oYLLLT TTT TT »>ACLCE ere) . Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature ; “CURE GET (TT [i tf | cal VL | TTT TTT I 0 -+++ + Saeeeeepee 4 gol eee » efea t+} 4 eS tHE PONE @ eee ad a ei ° ST oalVI TTT | of | | 1S i beat PS | SSNS ip (AMPERES) Te ('c) Maximum Rated Safe Operating Area Thermal Response Characteristics " Fase “COMO Pine 7 Ee SCL 2 COCCI TTT 2 08 EAT el THC 2 Cocco
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