VN0106NE SUTEX | Alldatasheet
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Technical content
SUPERTEX INC OL DE@} 8773295 0001783 4 Lc
8773295 SUPERTEX INC OTE 01783 °° D
. VNO106NE / VNO109NE () Supertex inc. Surface Mount T-Y3-25 ® N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Ordering Information
a Features Advanced DMOS Technology OD 4 independent channels ‘These enhancement-mode (normally-off) power transistors utll- . 7 ize a vertical DMOS structure and Supertex's well-proven silicon- O 4 electrically tsolated die {gate manufacturing process. This combination produces devices © Commercial and Military versions available ‘with the power handling capabilities of bipolar transistors and with A the high input impedance and negative temperature coefficient G Freedom from secondary breakdown inherent in MOS devices. Characteristic of all MOS structures, C1 Low power drive requirement these devices are free from thermal runaway and thermally- 1 Low Cigg and fast switching speeds induced secondary breakdown. i " a ‘Supertex Vertical DMOS Power FETs are ideally sulted to a wide © High input impedance and high gain range of switching and amplifying applications where high break- © Complementary N- and P-Channel devices down voltage, high Input impedance, low input capacitance, and | fast switching speeds are desired.
Applications
© Motor control Refer to VNO1A Data Sheet for detailed characteristics. O Convertors O) Ampliiers Pin Configuration f G Switches : © Power supply circuits ~ Driver (Relays, Hammers, Solenoids, Lamps, Sf) Ce] § . Memories, Displays, Bipolar Transistors, etc.) no [2] Ge} 0, ss] Gals, Thermal Characteristics ncfe] Go, [5] als, iF 8, aco * Pulse fos 300 8 pulse, 2% dly oy. ' * Total for package, 10-28 |