VN0104 SUTEX | Alldatasheet

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices TO-92 S G D Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 40V 3.0 Ω 2.0A VN0104N3 60V 3.0 Ω 2.0A VN0106N3

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 350mA 2.0A 1.0W 125 170 350mA 2.0A *I D (continuous) is limited by max rated T j. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS VN0106 60 VN0104 40 VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/ °CV GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 V GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 1.0 V GS = 5V, VDS = 25V 2.0 2.5 V GS = 10V, VDS = 25V RDS(ON) 3.0 5.0 V GS = 5V, ID = 250mA 2.5 3.0 V GS = 10V, ID = 1A ∆RDS(ON) Change in RDS(ON) with Temperature 0.70 1 %/ °CV GS = 10V, ID = 1A GFS Forward Transconductance 300 450 m V DS = 25V, ID = 0.5A CISS Input Capacitance 55 65 COSS Common Source Output Capacitance 20 25 pF CRSS Reverse Transfer Capacitance 5 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 V V GS = 0V, ISD =1.0A trr Reverse Recovery Time 400 ns V GS = 0V, ISD =1.0A Notes: 2. All A.C. parameters sample tested. A Static Drain-to-Source ON-State Resistance VV GS = 0V, ID = 1mA Drain-to-Source Breakdown Voltage Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V ID = 1A RGEN = 25Ω ns VGS = 0V, VDS = 25V f = 1 MHz Ω Ω

Typical Performance Curves /K4F/K75/K74/K70/K75/K74 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K32/K2E/K35 /K32/K2E/K30 /K31/K2E/K35 /K31/K2E/K30 /K30/K2E/K35 /K30/K31 /K30 /K32 /K30 /K33 /K30 /K35 /K30 /K34/K30 /K53/K61/K74/K75/K72/K61/K74/K69/K6F/K6E /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K30/K32 /K34 /K36 /K31 /K30 /K38 /K4D/K61/K78/K69/K6D/K75/K6D /K52/K61/K74/K65/K64 /K53/K61/K66/K65 /K4F/K70/K65/K72/K61/K74/K69/K6E/K67/K41/K72/K65/K61 /K30/K2E/K31 /K31/K30/K30 /K31/K30/K31/K2E/K30 /K30/K2E/K31 /K31/K2E/K30 /K31/K30 /K30/K2E/K30/K31 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K70/K6F/K6E/K73/K65 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K69/K73/K74/K61/K6E/K63/K65 /K28/K6E/K6F/K72/K6D/K61/K6C/K69/K7A/K65/K64/K29 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30/K2E/K30/K30/K31 /K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31 /K54/K72/K61/K6E/K73/K63/K6F/K6E/K64/K75/K63/K74/K61/K6E/K63/K65 /K76/K73/K2E /K44/K72/K61/K69/K6E /K43/K75/K72/K72/K65/K6E/K74 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30 /K30 /K31/K2E/K30/K30/K2E/K32 /K30/K2E/K34 /K30/K2E/K36 /K30/K2E/K38 /K47 /K46/K53 /K28/K73/K69/K65/K6D/K65/K6E/K73/K29 /K50/K6F/K77/K65/K72 /K44/K69/K73/K73/K69/K70/K61/K74/K69/K6F/K6E /K76/K73/K2E /K43/K61/K73/K65 /K54/K65/K6D/K70/K65/K72/K61/K74/K75/K72/K65 /K30 /K31/K35/K30/K31/K30/K30/K35/K30 /K32/K2E/K30 /K31/K2E/K30 /K31/K32/K35/K37/K35/K32/K35 /K50 /K44 /K28/K77/K61/K74/K74/K73/K29 /K54/K4F/K2D/K39/K32/K54 /K41 /K3D /K2D/K35/K35 °/K43 /K56 /K47/K53 /K3D /K31/K30/K56 /K38/K56 /K36/K56 /K34/K56 /K30 /K30 /K30 /K38/K56 /K36/K56 /K34/K56 /K32/K2E/K35 /K32/K2E/K30 /K31/K2E/K35 /K31/K2E/K30 /K30/K2E/K35 /K30 /K54/K4F/K2D/K39/K32 /K28/K44/K43/K29 /K54 /K43 /K3D/K32 /K35 °/K43 /K56 /K47/K53 /K3D/K31/K30/K56 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K56 /K44/K53 /K3D /K32/K35/K56 /K32/K35 °/K43 /K31/K32/K35 °/K43 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K74 /K70 /K28/K73/K65/K63/K6F/K6E/K64/K73/K29 /K54 /K43 /K28 °/K43/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54/K4F/K2D/K39/K32 /K50 /K44 /K3D/K31 /K57 /K54 /K43 /K3D/K32 /K35 °/K43

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VN0104/VN0106 Typical Performance Curves C Gate Drive Dynamic Characteristics QG (nanocoulombs) VGS (volts) Tj(°C) VGS(th) (normalized) DS(ON)R (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) 01 0 2 03 04 0 02468 1 0 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 0.9 0 2.51.0 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 VDS = 10V V(th) @ 1mA RDS @ 10V, 1.0A 0.5 1.5 2.0 1.0 2.0 3.0 5.0 4.0 40 pF 40V 80 pF 1.9 1.6 1.3 1.0 0.7 0.4 f = 1MHz RDS @ 5V, 0.25A BVDSS Variation with Temperature BVDSS (normalized) Tj (°C) VDS = 25V TA = -55°C 25°C 125°C CISS COSS CRSS VGS = 5V VGS = 10V