VC0206N6 SUTEX | Alldatasheet
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Technical content
SUPERTEX INC OL DEM 6773295 0001781 5 : VC0206N6 | () Supertex inc. vco206N7 T-¥3-25 Complementary Enhancement-Mode Vertical DMOS Power FETs Quad Array
Ordering Information
BV ose / Posiow (max) Order Number / Package BV cas Q1+Q20rQ3+04 14-Pin P-Dip Te ee vco206Né *14-pin Side Brazed Ceramic Dip. Features ~ Advanced DMOS Technology (4 independent channels ‘These enhancement-mode (normally-off) power transistors utll- ize a vertical DMOS structure and Supertex's well-proven silicon- © 4 electrically tsolated dle gate manufacturing process. This combination produces devices Commercial and Military versions available with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient © Freedom from secondary breakdown inherent in MOS devices, Characteristic of all MOS structures, Low power drive requirement these devices are free from thermal runaway and thermally- CO Low Cig, and fast switching speeds Induced secondary breakdown. ' a a ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide © High input impedance and high gain ange of switching and amplitying applications where high break- © Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications isti OD Motor contro! Refer to VNO2A and VPO2A Data Sheets for detailed character- 1 Convertors Istics of N- and P-Channel devices. Q Amplifiers 1D Switches Pin Configuration Power supply circuits ~~ (Driver (Relays, Hammers, Solenoids, Lamps, 1 [7416 : Memories, Displays, Bipolar Transistors, etc.) ety ‘ [is] S No, 5 fa] s, ! Thermal Characteristics : * sora] [ir] no Na, : & lq (single die) [P-Channel | 0.6A__| _0.7A__| 07 % feo, : |p pulsed N-Channel | 4.04 | 4.08 _| : : foe __[r-chamet | 28a | 28a _| woven , i PowerDissipation@T,=26°c?| aw | aw | 14-pin DIP i 84°C) [| as [2 | : * Pulse 1661900 nS pulse, 2% duly oye, ; 4 Total for package. i Pa 10-26 | 3 a FES