TP2635 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — -2.0V max. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Package Options S G D Note: See Package Outline section for dimensions. TO-92 SO-8 top view NC D NC D SD GD Low Threshold

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W SO-8 -210mA -1.25A 1.3W † 24 96 † -210mA -1.25A TO-92 -180mA -0.8A 1.0W 125 170 -180mA -0.8A * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS TP2640 -400 V V GS = 0V, ID = -2.0mA TP2635 -350 VGS(th) Gate Threshold Voltage -0.8 -2.0 V V GS = VDS, ID= -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 5.0 mV/ °CV GS = VDS, ID= -1.0mA IGSS Gate Body Leakage -100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -1 µAV GS = 0V, VDS = -100V -10 µAV GS = 0V, VDS = Max Rating -1 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.7 V GS = -10V, VDS = -25V RDS(ON) 12 15 V GS = -2.5V, ID = -20mA 11 15 V GS = -4.5V, ID = -150mA 11 15 V GS = -10V, ID = -300mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = -10V, ID = -300mA GFS Forward Transconductance 200 m V DS = -25V, ID = -300mA CISS Input Capacitance 300 COSS Common Source Output Capacitance 50 pF CRSS Reverse Transfer Capacitance 12 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 60 tf Fall Time 40 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -200mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -200mA Notes: 2. All A.C. parameters sample tested. A Ω Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V, ID = -300mA, RGEN = 25Ω ns Static Drain-to-Source ON-State Resistance Ω 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Switching Waveforms and Test Circuit

Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 VDS (volts) I (amperes)D Saturation Characteristics VDS (volts) I (amperes)D Maximum Rated Safe Operating Area -1 -1000 -100-10 -10 -1.0 -0.1 -0.01 -0.001 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 0 -0.8-0.4 GFS (siemens) ID (amperes) Power Dissipation vs. Temperature 0 15010050 2.0 1.6 1.2 0.8 0.4 1257525 TC C)°( DP (watts) TO-92 TC = 25 °C PD = 1.0W SO-8 TO-92 TA = -55°C VDS = -25V 25°C 125°C -1.2 -2.0 -1.6 -1.0 -0.8 -0.6 -0.4 -0.2 VGS = -10V -3V -4V -6V -8VVGS = -10V -8V -6V -3V -4V SO-8 (pulsed) TC = 25°C TO-92 (DC) TO-92 (pulsed) SO-8 (DC)

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TP2635/TP2640 Typical Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) VTH and RDS Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 400 C (picofarads) VDS (volts) I BV 0 -10 -20 -30 -40 200 300 100 0- 2 - 4- 6- 8 - 1 0 -2.0 -1.6 -1.2 -0.8 -0.4 -50 0 50 100 150 1.1 1.0 1.2 1.0 0.8 0.6 0.4 -10 012 3 45 -50 0 50 100 150 263pF VDS = -10V VDS = -40V 678pF VGS = -4.5V VGS = -10V VGS = -2.5V +125°C f = 1MHz CISS COSS CRSS 0.9 2.5 2.0 1.5 1.0 0.5 RDS(ON)@ -10V, -0.3A 25°CTA = -55°C VDS = -25V V(th) @ -1mA