TP2535 SUTEX | Alldatasheet

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Technical content

Features

❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Order Number / Package P-Channel Enhancement-Mode Vertical DMOS FETs

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. TO-243AA (SOT-89) G D S D S G D TO-92 Product marking for TO-243AA Where ❋ = 2-week alpha date code TP5D❋

Symbol Parameter Min Typ Max Unit Conditions BVDSS TP2540 -400 TP2535 -350 VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID = -1mA ∆VGS(th) Change in VGS(th) with Temperature 4.8 mV/ °CV GS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.2 -0.3 A VGS = -4.5V, VDS = -25V RDS(ON) Static Drain-to-Source 20 30 Ω VGS = -4.5V, ID = -100mA ON-State Resistance 19 25 V GS = -10V, ID = -100mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = -10V, ID = -100mA GFS Forward Transconductance 100 175 m V DS = -25V, ID = -100mA CISS Input Capacitance 60 125 COSS Common Source Output Capacitance 20 70 pF CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 13 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -100mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -100mA Notes: 2. All A.C. parameters sample tested. Thermal Characteristics VV GS = 0V, ID = -2mA -1.0 mA Electrical Characteristics (@ 25°C unless otherwise specified) ns VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ID = -0.4A RGEN = 25Ω Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-92 -86mA -0.6A 0.74W 125 170 -86mA -0.6A TO-243AA -125mA -1.2A 1.6W † 15 78 † -125mA -1.2A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate. Drain-to-Source Breakdown Voltage 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Ω

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TP2535/TP2540 Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th) and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) VDS (volts) I BV 0 -10 -20 -30 -40 150 100 0- 2 - 4- 6- 8 - 1 0 -1.6 -1.2 -0.8 -0.4 -50 0 50 100 150 1.1 1.0 100 1.2 1.1 1.0 0.9 0.8 -10 -50 0 50 100 150 60pF VDS = - 40V VDS = - 10V VGS = -4.5V VGS = -10V T = -55°CA VDS = - 25V 125°C f = 1MHz CISS COSS 0.9 190 pF 2.5 2.0 1.5 1.0 0.5 (th)V @ -1mA 25°C CRSS RDS(ON) @ -10V, -0.1A Typical Performance Curves