TP2510 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. G D S TO-243AA (SOT-89) D Product marking for TO-243AA Where ❋ = 2-week alpha date code TP5A❋

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-243AA -480mA -2.5A 1.6W † 15 78 † -480mA -2.5A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Symbol Parameter Min Typ Max Unit Conditions BVDSS -100 V V GS = 0V, ID = -2.0mA VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID= -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 5.0 mV/ °CV GS = VDS, ID= -1.0mA IGSS Gate Body Leakage -100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.4 -0.6 V GS = -5.0V, VDS = -25V RDS(ON) 5.0 7.0 V GS = -5.0V, ID = -250mA 2.0 3.5 V GS = -10V, ID = -0.75A ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = -10V, ID = -0.75A GFS Forward Transconductance 300 360 m V DS = -25V, ID = -0.75A CISS Input Capacitance 80 125 COSS Common Source Output Capacitance 40 70 pF CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 15 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -1.0A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -1.0A Notes: 2. All A.C. parameters sample tested. A Ω Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VDD = -25V, ns I D = -1.0A, RGEN = 25Ω VGS = 0V, VDS = -25V f = 1.0 MHz 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Switching Waveforms and Test Circuit Ω

Saturation Characteristics 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -10 -1.0 -0.1 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 Power Dissipation vs. Ambient Temperature 0 15010050 2.0 1.0 1257525 TO-243AA(pulsed) VGS = -10V -6V -4V TO-243AA (DC) -3V TO-243AA -8V -3V -4V -8V -6V VDS = -25V TA = -55°C TA = 25°C TA = 125°C TA = 25°C TO-243AA TA = 25 °C PD = 1.6W VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V GFS (siemens) ID (amperes) T A (°C) PD (watts) VDS (volts) ID (amperes) Typical Performance Curves

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TP2510 Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) 0 -10 -20 -30 -40 100 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.1 1.0 0.9 1.4 1.2 1.0 0.8 0.6 0.4 2.0 1.6 1.2 0.8 0.4 -10 0 1.0 2.0 -50 0 50 100 150 VDS = -40V VDS = -10V VGS = -5V VGS = -10V TA = -55°C f = 1MHz 71 pF RDS (ON) @ -10V, -0.75A 150 142 pF 150°C 25°C RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) VDS = -25V V(th) @ -1mA QG (nanocoulombs) VGS (volts) VDS (volts) CISS COSS CRSS Typical Performance Curves