TP2502

TP2502 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well- proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. P-Channel Enhancement-Mode Vertical DMOS FETs Package Option Note: See Package Outline section for dimensions. BVDSS /R DS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die † -20V 2.0 Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available. TO-243AA (SOT-89) G D S D Product marking for TO-243AA Where ❋ = 2-week alpha date code TP5L❋

Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source -20 V V GS = 0V, ID = -2.0mABreakdown Voltage VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID= -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 3.0 4.5 mV/ °CV GS = VDS, ID= -1.0mA IGSS Gate Body Leakage -100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -100 µAV GS = 0V, VDS = Max Rating -10 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.4 -0.7 V GS = -5.0V, VDS = -15V RDS(ON) 2.0 3.5 Ω VGS = -5.0V, ID = -250mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 1.2 %/ °CV GS = -10V, ID = -1.0A GFS Forward Transconductance 0.3 0.65 V DS = -15V, ID = -1.0A CISS Input Capacitance 125 COSS Common Source Output Capacitance 70 pF CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 11 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 12 VSD Diode Forward Voltage Drop -1.3 -2.0 V V GS = 0V, ISD = -1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -1.5A Notes: 2.All A.C. parameters sample tested. Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-243AA -630mA -3.3A 1.6W † 15 78 † -630mA -3.3A * ID (continuous) is limited by max rated T j. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V A ns VDD = -20V, ID = -1.0A, RGEN = 25Ω VGS = 0V, VDS = -20V f = 1.0 MHz Static Drain-to-Source ON-State Resistance Ω

VDS (volts) Saturation Characteristics 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -10 -1.0 -0.1 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 Power Dissipation vs. Ambient Temperature 0 15010050 2.0 1.6 1.2 0.8 0.4 1257525 TO-243AA(pulsed) -4V -3V -5V -6V -7V -8V -9V TO-243AA (DC) TO-243AA -4V -3V -5V -6V -7V -8V -9V VGS = -10V VDS = -15V TA = -55°C TA = 25°C TA = 150°C TA = 25°C TO-243AA TA = 25 °C PD = 1.6W ID (amperes) ID (amperes) VDS (volts) VGS = -10V GFS (siemens) ID (amperes) T A (°C) PD (watts) VDS (volts) ID (amperes) Typical Performance Curves

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TP2502 Typical Performance Curves Gate Drive Dynamic Characteristics Tj (°C) On-Resistance vs. Drain Current (normalized) Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) 0 -10 -20 -30 -40 100 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.1 1.0 0.9 1.4 1.2 1.0 0.8 0.6 2.0 1.6 1.2 0.8 0.4 -10 -50 0 50 100 150 VDS = -40V VDS = -10V VGS = -5V VGS = -10V TA = -55°C 0- 1- 2 - 3 - 5 -4 f = 1MHz 80 pF (th)V @ -1mA RDS (ON) @ -10V, -1A 150 200 pF 150°C 25°C RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS(th) (normalized) RDS(ON) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) VDS = -15V QG (nanocoulombs) VGS (volts) VDS (volts) CISS COSS CRSS